Resistance Change Memory Element with Composite Oxide Layers
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Solution Overview
Problem
Resistance change memories face challenges in efficiently switching between low and high resistance states for data storage due to limitations in controlling the oxidation of electrode layers and maintaining stable resistance values, leading to high power consumption and instability in voltage operation.
Innovation Solution
A memory element comprising a memory layer with high resistive oxide layers scattered within a low resistive oxide layer, where the absolute standard Gibbs free energy of formation of the oxide layers is selectively controlled to form a current path and manage oxygen ion movement for bidirectional voltage control, reducing power consumption and enhancing resistance retention.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional resistance change memory structures are used with electrode layers, then data storage functionality is achieved, but control over oxidation is difficult leading to high power consumption
Solution Approach 1:
The patent extracts the electrode layers from the memory structure, replacing them with oxide layers having different Gibbs free energy of formation. This eliminates the oxidation control problems associated with traditional electrodes while maintaining the resistance switching functionality through oxygen ion migration in the oxide layer structure.
Solution Approach 2:
The patent changes the fundamental parameter controlling resistance switching from electrode potential to oxygen ion concentration. By using oxide layers with different Gibbs free energy of formation, the system controls oxygen ion migration thermodynamically rather than through electrochemical reactions at electrode interfaces, reducing power consumption and improving stability.
2Reliability
If simple oxide layers are used in the memory structure, then manufacturing is simplified, but resistance value retention becomes unstable
Solution Approach 1:
The patent employs a composite oxide layer structure where a first oxide layer with higher Gibbs free energy of formation is embedded within a second oxide layer with lower Gibbs free energy of formation. This composite structure provides stable resistance retention by controlling oxygen ion migration through the thermodynamic properties of the different oxide materials, while still using simple oxide compounds rather than complex multilayer electrodes.
3Manufacturing precision
If complex photolithography and etching processes are used, then precise memory element formation is achieved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent removes the need for photolithography and etching processes by eliminating traditional electrode structures that require precise patterning. The oxide layer structure can be formed using simpler deposition and annealing processes, significantly easing manufacturing while maintaining memory element precision through the self-organizing properties of oxygen ion migration.
Solution Approach 2:
The memory structure utilizes self-organizing oxygen ion migration during annealing to automatically form the functional oxide layer configuration. This self-service mechanism eliminates the need for complex external patterning processes like photolithography, as the oxygen ions naturally arrange themselves into the required structure during thermal processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables efficient switching between high and low resistance states with reduced power consumption and improved resistance value retention, stabilizing the operating voltage and facilitating simple manufacturing without the need for complex photolithography or etching processes.
Implementation Method 1
The resistance change memory includes a memory layer of which the resistance can change between a low resistance state and a high resistance state. Data storing can be assigned data to the low resistance state and the high resistance state. Here, the memory layer can be switched between the low resistance state and the high resistance state by applying a voltage to electrodes formed at its both ends.
Implementation Method 2
the absolute standard Gibbs free energy of formation of the oxide layers is selectively controlled to form a current path and manage oxygen ion movement for bidirectional voltage control
Implementation Method 3
limitations in controlling the oxidation of electrode layers and maintaining stable resistance values
Data Source
AI summary
According to one embodiment, a memory element includes: a first electrode layer; a second electrode layer; and a memory layer provided between the first electrode layer and the second electrode layer, and the memory layer including a plurality of first oxide layers in a second oxide layer, a resistivity of each of the plurality of first oxide layers being higher than a resistivity of the second oxide layer.