Semiconductor Resistance Element Parasitic Bipolar Transistor ESD Protection

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

The miniaturization of semiconductor devices is hindered by the need for dedicated electrostatic protection elements, which are not related to the original operation of the device, and there is a desire to improve electrostatic breakdown tolerance without compromising miniaturization.

Innovation Solution

Incorporating a parasitic bipolar transistor with an electrostatic protection function into a resistance element within the semiconductor device, eliminating the need for a dedicated electrostatic protection element by utilizing the resistance element as both a low-pass filter and an electrostatic protection component.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a dedicated electrostatic protection element is provided in the semiconductor device, then the electrostatic breakdown tolerance is improved, but the device size increases and miniaturization is hindered

Engineering Contradiction:

Improveelectrostatic breakdown toleranceVSAvoiddevice area

Core Design Contradiction:

ReliabilityVSArea of stationary object

Solution Approach 1:

The patent merges the electrostatic protection function with the resistance element by forming a parasitic bipolar transistor structure where the resistance element serves as the emitter. This combination allows the same structure to perform both resistance function and electrostatic protection function, eliminating the need for a dedicated electrostatic protection element and enabling device miniaturization while maintaining electrostatic breakdown tolerance

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The resistance element is designed to serve multiple functions: it acts as both a resistance element for circuit operation and as part of a parasitic bipolar transistor structure for electrostatic protection. This multi-functionality allows a single component to fulfill both roles, reducing the overall device area while improving electrostatic breakdown tolerance

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Reliability

If additional electrostatic protection elements are added to the semiconductor device, then the electrostatic breakdown tolerance is improved, but the device complexity increases

Engineering Contradiction:

Improveelectrostatic breakdown toleranceVSAvoiddevice structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the electrostatic protection function with the existing resistance element by forming a parasitic bipolar transistor structure. This merging approach eliminates the need for additional separate protection elements, thereby reducing device complexity while maintaining improved electrostatic breakdown tolerance

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The resistance element automatically provides electrostatic protection through the formation of a parasitic bipolar transistor structure when exposed to electrostatic discharge. This self-service mechanism eliminates the need for separate control circuits or additional protection components, simplifying the overall device structure while ensuring reliable electrostatic protection

Inventive Principle:

Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the electrostatic breakdown tolerance of semiconductor devices while maintaining miniaturization, as the parasitic bipolar transistor effectively suppresses surge charges and prevents electrostatic breakdown without the need for additional protection elements.

Implementation Method 1

an electrostatic protection element including a parasitic bipolar transistor having this resistance element as a component is provided

Methodology Applied

Scientific EffectBipolar transistor operation:

Data Source

PatentUS10229903B2Semiconductor device with a resistance element and an electrostatic protection element

Publication Date: 2019.03.12 RENESAS ELECTRONICS CORP

AI summary

In a semiconductor device including a resistance element, an electrostatic protection element, including a parasitic bipolar transistor having the resistance element as a component, is provided. That is, instead of providing a dedicated electrostatic protection element in a semiconductor device, a function as an electrostatic protection element is also achieved by using a resistance element provided in a semiconductor device.