Resistance Memory Contact via Vertical Plug and Sidewall Insulation
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Solution Overview
Problem
Miniaturization of resistance change type memory elements poses challenges in forming stable contacts with interconnects, leading to decreased process margins and potential short circuits due to the complexity of the manufacturing process.
Innovation Solution
A resistance change type memory structure is developed with a resistance change element on a substrate, featuring a sidewall insulating film that covers the side surface of the element, a plug connected to the lower electrode, and an interconnect connected to the upper electrode, where the interconnect covers the side surface of the element via the insulating film, preventing short circuits and ensuring stable electrical contact without a complicated manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory element size is reduced to increase storage density, then storage density improves, but contact stability between memory element and interconnect deteriorates
Solution Approach 1:
The patent transitions from planar contact geometry to three-dimensional contact geometry by forming contact holes that extend vertically through the interlayer insulating film. The lower electrode protrudes into the contact hole, creating a vertical contact path that maintains stable electrical connection even as memory element planar dimensions are reduced. This dimensional change allows contact stability to be maintained while enabling further miniaturization for increased storage density.
Solution Approach 2:
The contact hole structure nests multiple components within a confined vertical space: the lower electrode is positioned inside the contact hole, which is formed within the interlayer insulating film. This nested arrangement allows the contact structure to be integrated within the miniaturized memory element footprint, maintaining reliable contact while reducing overall device area for higher storage density.
2Ease of manufacture
If manufacturing process is simplified to reduce steps, then ease of manufacture improves, but manufacturing precision may deteriorate
Solution Approach 1:
The patent combines multiple functions into the lower electrode structure: it serves as both the electrical contact to the memory element and as a structural component that protrudes into the contact hole to ensure stable connection. This merging of contact function and structural support function into a single component reduces the number of separate manufacturing steps while maintaining precise contact formation through the protrusion geometry.
Solution Approach 2:
The lower electrode's protrusion into the contact hole creates a self-aligning contact structure where the electrode itself defines the contact position and geometry. This self-service approach eliminates the need for separate contact alignment steps, as the protruding electrode automatically ensures proper contact formation with the memory element, maintaining manufacturing precision while simplifying the overall process.
Data Source
AI summary
According to one embodiment, a memory includes a resistance change element on an interlayer insulating film and including a lower electrode and an upper electrode, a sidewall insulating film on a side surface of the element, a plug in the interlayer insulating film and connected to the lower electrode, an interconnect on the interlayer insulating film and connected to the upper electrode. The element is provided immediately above the plug, the interconnect covers the side surface of the element via the sidewall insulating film, an upper surface of the first plug is covered with the lower electrode and the sidewall insulating film.