Resistive Element Layout With Vertical Thermal Conduction
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Solution Overview
Problem
The challenge in semiconductor manufacturing lies in forming reliable devices at smaller sizes due to increased complexity and the effect of electromigration, particularly in high direct current density applications where feature sizes are small, making effective heat dissipation crucial.
Innovation Solution
A semiconductor device structure is developed with a resistive element and a thermal conductive element formed over an interconnect structure, where the thermal conductive element is positioned directly above or below the resistive element to efficiently dissipate heat generated by the resistive element, preventing temperature accumulation and electromigration issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes are decreased to increase functional density, then production efficiency and cost are improved, but electromigration effects and heat dissipation become more severe
Solution Approach 1:
The patent introduces a vertical thermal conduction dimension by placing thermal conductive elements above and below the resistive element, transforming the traditional planar heat dissipation approach into a three-dimensional thermal management structure. This allows heat to be conducted in the vertical direction (Z-axis) rather than relying solely on lateral conduction in the XY-plane, effectively addressing heat dissipation challenges in scaled-down devices.
Solution Approach 2:
The patent introduces thermal conductive elements as intermediary structures between the resistive element and the surrounding environment. These intermediary elements serve as dedicated heat transfer pathways, facilitating efficient thermal energy transfer from the heat-generating resistive element to heat sink structures without interfering with the electrical functionality of the device.
2Length of moving object
If feature sizes are decreased, then geometric scaling benefits are achieved, but heat dissipation becomes more difficult
Solution Approach 1:
The patent introduces a vertical thermal conduction dimension by placing thermal conductive elements above and below the resistive element, transforming the traditional planar heat dissipation approach into a three-dimensional thermal management structure. This allows heat to be conducted in the vertical direction (Z-axis) rather than relying solely on lateral conduction in the XY-plane, effectively addressing heat dissipation challenges in scaled-down devices.
Solution Approach 2:
The thermal management structure is segmented into multiple independent thermal conductive elements positioned at different locations (above, below, and laterally adjacent to the resistive element). This segmentation creates multiple parallel heat dissipation pathways, allowing heat to be distributed and conducted through various routes simultaneously, thereby improving overall heat dissipation efficiency.
3Power
If high direct current densities are used, then device performance is improved, but electromigration effects become more severe
Solution Approach 1:
The patent converts the harmful heat generated by high current density operation into a manageable thermal parameter by introducing dedicated thermal conductive elements. Instead of allowing heat to accumulate and cause electromigration, the structure channels this thermal energy through controlled pathways to heat sink elements, transforming a harmful byproduct into a controlled thermal management opportunity.
Solution Approach 2:
The patent introduces thermal conductive elements as intermediary structures between the resistive element and the surrounding environment. These intermediary elements serve as dedicated heat transfer pathways, facilitating efficient thermal energy transfer from the heat-generating resistive element to heat sink structures without interfering with the electrical functionality of the device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves heat dissipation, reducing the risk of electromigration and enhancing the reliability and performance of semiconductor devices by effectively managing heat generated during high-speed operations.
Implementation Method 1
one or more thermal conductive elements are formed directly above or directly under the resistive element. Thus, heat generated by the resistive element may be led out by the thermal conductive element
Data Source
AI summary
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a resistive element over the substrate. The semiconductor device structure also includes a thermal conductive element over the substrate. A direct projection of the thermal conductive element on a main surface of the resistive element extends across a portion of a first imaginary line and a portion of a second imaginary line of the main surface. The first imaginary line is perpendicular to the second imaginary line, and the first imaginary line and the second imaginary line intersect at a center of the main surface.