Resistive Feedback Amplifier Biasing at Reduced Supply Voltage

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Solution Overview

Problem

Capacitively fed back amplifiers in integrated semiconductor circuits face challenges with resistor implementation due to large area requirements and parasitic capacitances, and existing solutions require a supply voltage of at least two threshold voltages of MOSFET transistors.

Innovation Solution

An electronic device with a single-transistor amplifier configuration using a diode-coupled second transistor in the feedback path, where the first input transistor and diode-coupled second transistor are of opposite doping types, allowing for a defined resistive path and reduced supply voltage requirements, and optionally using capacitors to bias the amplifier.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a resistor is used to define the DC bias point in a capacitively fed back amplifier, then the DC operating point is properly established, but the area occupied is large and parasitic capacitances increase

Engineering Contradiction:
ImproveDC operating point stabilityVSAvoidresistor area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent changes the physical implementation of the resistive feedback path from a dedicated resistor to the on-resistance of a transistor operated in the triode region. This parameter change allows the same electrical function (providing a resistive path for DC bias) to be achieved with much smaller area and different parasitic characteristics, directly resolving the contradiction between DC stability and area occupation.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If a resistor is used to define the DC bias point in a capacitively fed back amplifier, then the DC operating point is properly established, but parasitic capacitances increase

Engineering Contradiction:
ImproveDC operating point stabilityVSAvoidparasitic capacitance
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent changes the physical implementation from a resistor to a transistor in triode region, which fundamentally alters the parasitic capacitance profile. The transistor's on-resistance provides the necessary DC path while its parasitic capacitances are different in magnitude and characteristics compared to a discrete resistor, thereby reducing the harmful parasitic effects while maintaining DC stability.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If existing amplifier solutions are used, then the amplifier can operate, but the supply voltage must be at least two threshold voltages of MOSFET transistors

Engineering Contradiction:
Improveamplifier operationVSAvoidsupply voltage
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent changes the operating region of the input transistor from saturation to triode region, and uses a capacitor in parallel with the transistor to provide AC feedback while maintaining DC bias through the transistor's on-resistance. This parameter change in operating mode allows the amplifier to function with a supply voltage lower than two threshold voltages, directly resolving the contradiction between operational reliability and energy consumption.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS8558612B2Electronic device and method for an amplifier with resistive feedback
Publication Date: 2013.10.15 TEXAS INSTRUMENTS INC
  • US8558612B2 patent drawing
  • US8558612B2 patent drawing
  • US8558612B2 patent drawing

AI summary

An electronic device comprising an amplifier having at least a first input transistor of a first doping type. A first transistor is coupled with a channel as a feedback path between an output of the amplifier and a control gate of the first input transistor forming an input of the amplifier. A diode-coupled second transistor is coupled with a channel between a first current source and the output of the amplifier wherein a control gate of the first transistor is coupled between the first current source and the diode-coupled second transistor and the first transistor is of a second doping type which is opposite to the first doping type of the first input transistor of the amplifier.