Resistive Film Embedded in Dummy Stack Depression for 3D Memory
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Three-dimensional semiconductor memory devices face challenges in optimizing the area occupied by memory cells and the manufacturing process, particularly in forming resistive films and dummy stacks to efficiently control operation voltages and reduce the footprint of peripheral circuits.
Innovation Solution
The semiconductor memory device incorporates a resistive film overlapping a depression in a dummy stack, with a second stack covering the resistive film, and a method involving forming a preliminary source structure, insulating film, and resistive film to alleviate surface roughness and optimize area usage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a three-dimensional semiconductor memory device is used to reduce occupied area, then the footprint of memory cells is reduced, but the complexity of forming resistive films and dummy stacks increases
Solution Approach 1:
The resistive film is merged with the dummy stack structure by embedding the resistive film within the depression of the dummy stack. This integration combines two previously separate components (resistive film for voltage control and dummy stack for structural support) into a unified structure, reducing the overall footprint while maintaining both voltage control functionality and structural integrity.
Solution Approach 2:
The resistive film is nested within the dummy stack by placing it in the depression formed by the first dummy stack. This nesting approach allows the resistive film to be housed within the existing dummy stack structure, effectively utilizing vertical space and reducing horizontal occupation area without adding separate external components.
2Reliability
If resistive films are formed to control operation voltages, then voltage control is improved, but the area occupied by peripheral circuits increases
Solution Approach 1:
The voltage control function (resistive film) is merged with the structural component (dummy stack) by embedding the resistive film within the dummy stack's depression. This eliminates the need for separate voltage control circuits that would occupy additional peripheral area, as the dummy stack itself becomes the vehicle for housing the resistive film.
Solution Approach 2:
The resistive film is transitioned from a planar layout to a vertical integration within the dummy stack's depression. By moving the resistive film into the vertical dimension (embedding it within the stack structure rather than placing it beside it), the horizontal area occupied by voltage control elements is significantly reduced.
3Strength
If dummy stacks are formed to support the structure, then structural integrity is maintained, but the surface roughness increases
Solution Approach 1:
The depression is formed locally within the dummy stack at the specific position where the resistive film needs to be embedded. This localized modification maintains the overall structural integrity of the dummy stack while creating a specific region with different topography (the depression) that accommodates the resistive film and reduces surface roughness in the critical area.
Data Source
AI summary
The present disclosure includes a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device includes an insulating film passing through a dummy source structure, a first dummy stack extending to overlap the insulating film and the dummy source structure, and including a depression overlapping the insulating film, a resistive film overlapping the depression of the first dummy stack, and a second dummy stack disposed on the first dummy stack to cover the resistive film.