Resistive Film Layout for Width Variation and Smaller Chip Area

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Solution Overview

Problem

Maintaining consistent width of resistive films in semiconductor devices is challenging, leading to decreased circuit accuracy and increased chip area when widths fall outside predetermined ranges, necessitating the use of dummy films.

Innovation Solution

The resistive films are divided into groups with varying width variations, with some films connected to a first circuit group and others to a second circuit group, allowing for suppression of chip area increase while maintaining circuit accuracy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the width of each resistive film is designed to be constant, then circuit accuracy can be maintained, but it is difficult to keep the width constant and dummy resistive films must be used, which increases the chip area

Engineering Contradiction:
Improvewidth consistency of resistive filmsVSAvoidchip area
Core Design Contradiction:
Manufacturing precisionVSArea of stationary object

Solution Approach 1:

The patent applies local quality by creating different width variation characteristics in different regions of the resistive film array. The first group of resistive films is designed with smaller width variations compared to the second group, allowing each region to have optimized properties for its specific function while using the same manufacturing process.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the width parameter systematically across different groups of resistive films. By intentionally designing the first group with smaller width variations and the second group with larger width variations, the patent optimizes circuit accuracy for critical films while reducing the need for dummy films, thereby decreasing chip area.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If dummy resistive films are used to maintain circuit accuracy, then circuit performance is preserved, but the chip area increases

Engineering Contradiction:
Improvecircuit accuracyVSAvoidchip area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent eliminates the need for dummy resistive films by creating local quality differences in the resistive film groups. The first group with smaller width variations is used for critical circuit paths requiring high accuracy, while the second group with larger width variations serves less critical functions, removing the need for additional dummy films and reducing chip area.

Inventive Principle:
Principle #3Local quality

3Adaptability or versatility

If all resistive films are used in the circuit, then circuit functionality is maximized, but width variations decrease accuracy

Engineering Contradiction:
Improvecircuit functionalityVSAvoidwidth consistency
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The patent resolves this contradiction by dividing resistive films into groups with different width variation characteristics. The first group with smaller width variations is assigned to critical circuit paths where accuracy is paramount, while the second group with larger width variations is used for less critical functions, allowing all films to be utilized without compromising overall circuit accuracy.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS12412832B2Semiconductor device
Publication Date: 2025.09.09 RENESAS ELECTRONICS CORP
  • US12412832B2 patent drawing
  • US12412832B2 patent drawing
  • US12412832B2 patent drawing

AI summary

A semiconductor device includes a plurality of resistive films arranged on an interlayer dielectric film. Each of the plurality of resistive films extends in a first direction in plan view. The plurality of resistive films are arranged spaced apart in a second direction orthogonal to the first direction in plan view. The plurality of resistive films are divided into a first group, a second group, and a third group. The first group is located between the second group and the third group in the second direction. A second width variation amount of each of the plurality of second resistive films belonging to the second group and a third width variation amount of each of the plurality of third resistive films belonging to the third group are larger than a first width variation amount of each of the plurality of first resistive films belonging to the first group.