Resistive Memory Lifetime Extension via Bit Shuffling

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Solution Overview

Problem

Resistive change memory devices face issues with energy consumption, long delay times, finite lifetime, and increased error rates due to bit flips during repeated write operations, leading to potential system failures.

Innovation Solution

A method that generates data and hash candidates by shuffling bit positions of write data to minimize bit flips, calculates Hamming distances, and selects the candidate with the shortest distance to encode and store data, thereby reducing errors and extending the memory's lifetime.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If write operations are performed repeatedly in resistive change memory, then data storage capacity is utilized, but memory cell deterioration occurs and lifetime is reduced

Engineering Contradiction:
Improvewrite operation throughputVSAvoidmemory cell stability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies preliminary action by performing bit position shuffling and Hamming distance calculation before the actual write operation. This preprocessing identifies the optimal bit position mapping that minimizes bit flips, thereby reducing stress on memory cells before writing occurs, which helps extend memory lifetime while maintaining write throughput

Inventive Principle:
Principle #10Preliminary action

2Duration of action of stationary object

If bit positions are changed to minimize bit flips, then memory lifetime is extended, but write operation complexity increases

Engineering Contradiction:
Improvememory lifetimeVSAvoidwrite operation process
Core Design Contradiction:
Duration of action of stationary objectVSDevice complexity

Solution Approach 1:

The patent changes the parameter of bit position mapping by shuffling bit positions according to hash candidates and selecting the mapping with minimum Hamming distance. This parameter transformation optimizes the write operation to minimize bit flips and extend memory lifetime, while the systematic approach using hash functions and Hamming distance calculation keeps the complexity manageable

Inventive Principle:
Principle #35Parameter changes

3Reliability

If Hamming distance calculation is performed to select optimal data candidates, then bit flip minimization is achieved, but processing time increases

Engineering Contradiction:
Improvedata write accuracyVSAvoidwrite operation delay
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent performs Hamming distance calculation as a preliminary action before the actual write operation. By calculating Hamming distances in advance and selecting the candidate with minimum distance, the system ensures accurate data writing with minimized bit flips, while the precomputation approach helps manage the time overhead

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS10310940B2Method for extending lifetime of resistive change memory and data storage system using the same
Publication Date: 2019.06.04 SK HYNIX INC
  • US10310940B2 patent drawing
  • US10310940B2 patent drawing
  • US10310940B2 patent drawing

AI summary

A method for extending the lifetime of a resistive change memory includes generating data and hash candidates by shuffling bit positions of write data with the hash candidates in response to a write request for the resistive change memory, calculating Hamming distances of the generated data and hash candidates from stored data and a stored hash, matching stuck data at a predetermined bit in the resistive change memory with the generated data and hash candidates when the stuck data is at the predetermined bit, and excluding mismatched data and hash candidates that are mismatched with the stuck data among the generated data and hash candidates, finding a data and hash candidate with the shortest Hamming distance among the matched data and hash candidates, and choosing the found data and hash candidate as an encoded data and hash, and storing the encoded data and hash in the resistive change memory.