Resistive Memory Writing Method Disturbance Voltage HTDR
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Solution Overview
Problem
Conventional resistive memory storage apparatuses face challenges in maintaining high temperature data retention (HTDR) ability and endurance, as the robustness of filaments in both low and high resistance states is unknown, leading to unreliable performance under high-temperature conditions.
Innovation Solution
A writing method for resistive memory storage apparatuses that involves applying set and reset voltages, followed by a disturbance voltage, to determine the relationship between read currents and adjust the voltage application accordingly, ensuring the memory cell maintains HTDR ability and optimizes endurance by repeatedly applying the selected voltage until a preset relationship is satisfied.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional resistive memory is used with simple set and reset operations, then the device complexity is low, but the high temperature data retention ability and endurance are insufficient
Solution Approach 1:
The patent applies a disturbance voltage with polarity opposite to the first selected voltage before applying the second selected voltage. This preliminary action modifies the filament state to ensure robustness, preventing potential failures in high-temperature data retention and improving endurance without significantly increasing overall system complexity
Solution Approach 2:
The patent measures the second read current after applying the disturbance voltage and compares it with the first read current to determine whether to apply the second selected voltage. This feedback mechanism ensures the filament achieves the desired robustness while adapting the writing process to actual device state, improving reliability without requiring overly complex fixed procedures
2Stability of the object's composition
If the filament is made more robust to improve HTDR ability, then the high temperature data retention improves, but the writing process becomes more complex
Solution Approach 1:
The disturbance voltage is applied as a preliminary step before the final set or reset operation. This preliminary action pre-modifies the filament to enhance its robustness against high-temperature effects, ensuring stable composition without requiring completely complex rewriting procedures
Solution Approach 2:
The patent changes the voltage parameters by applying a disturbance voltage with polarity opposite to the first selected voltage and with absolute value less than the second selected voltage. This parameter modification approach achieves filament robustness through controlled electrical stress rather than through complex structural changes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively maintains the HTDR ability and optimizes the endurance of resistive memory storage apparatuses by ensuring the filament's stability and robustness, preventing interruptions in the current path even at high temperatures.
Implementation Method 1
a current flows from the upper electrode to the lower electrode and an oxygen vacancy and an oxygen ion are thus generated in the dielectric layer
Implementation Method 2
a current path (conductive filament) is formed and the resistive memory is switched from a high resistance state (HRS) to a low resistance state (LRS)
Implementation Method 3
the oxygen vacancy is combined with some of the oxygen ions, and the current path is disconnected at a proximity of the upper electrode
Data Source
AI summary
A writing method of a resistive memory storage apparatus includes: applying one of a set voltage and a reset voltage serving as a first selected voltage to a memory cell and obtaining a first read current; applying a disturbance voltage to the memory cell and obtaining a second read current; and determining whether a relationship between the first and second read currents satisfies a preset relationship, and if not, applying the other of the set voltage and the reset voltage serving as a second selected voltage to the memory cell and applying the first selected voltage to the memory cell again. A polarity of the disturbance voltage is different from that of the first selected voltage, and the absolute value of the disturbance voltage is less than that of the second selected voltage. A resistive memory storage apparatus is also provided.