Resistive Memory Sensing Circuit with Reference Time Generator

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Solution Overview

Problem

Resistive memory devices face challenges in increasing sensing margin and reducing power consumption during read operations, particularly due to variations in resistance levels and capacitance caused by environmental and temperature changes.

Innovation Solution

A resistive memory device is designed with a sensing circuit and a reference time generator that utilize a reference current and multiple reference time signals to stabilize data sensing, allowing for multi-bit data retrieval and reduced power consumption by adjusting current values based on the number of read operations and threshold resistance levels.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional sensing circuit is used without reference time control, then the circuit structure is simple, but the sensing margin is reduced and power consumption increases due to resistance and capacitance variations

Engineering Contradiction:
Improvesensing marginVSAvoidcircuit structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by generating reference time signals before the sensing operation to pre-establish the timing reference. The reference time generator creates multiple reference time signals corresponding to different read operation counts and threshold resistance levels, allowing the sensing circuit to operate at optimal timing points that compensate for resistance and capacitance variations, thereby improving sensing margin without requiring complex real-time adjustments during sensing

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements dynamics by making the reference time generation adaptive to changing conditions. The reference time generator dynamically adjusts the timing characteristics based on the number of read operations performed and the threshold resistance level, allowing the sensing system to adapt to drift and variations in the memory cell characteristics, thus maintaining reliable sensing across different operating conditions

Inventive Principle:
Principle #15Dynamics

2Speed

If higher current is used for sensing, then the sensing speed is improved, but the power consumption increases

Engineering Contradiction:
Improvesensing speedVSAvoidpower consumption
Core Design Contradiction:
SpeedVSUse of energy by moving object

Solution Approach 1:

The patent applies periodic action by using pulsed current sensing instead of continuous current. The sensing operation is performed in discrete time intervals determined by the reference time signals, with current applied only during the specific sensing window. This periodic activation allows for fast sensing when needed while minimizing power consumption during non-sensing periods, resolving the trade-off between sensing speed and power consumption

Inventive Principle:
Principle #19Periodic action

3Measurement precision

If the sensing time is extended to capture stable data, then the measurement precision is improved, but the productivity is reduced

Engineering Contradiction:
Improvedata sensing accuracyVSAvoidread operation speed
Core Design Contradiction:
Measurement precisionVSProductivity

Solution Approach 1:

The patent uses preliminary action by pre-calculating and generating reference time signals that correspond to the optimal sensing time points before the actual read operation begins. These reference time signals are generated based on the expected stabilization time of the memory cell, allowing the sensing to occur at the precise moment when data stability is achieved without requiring extended sensing time, thus maintaining both precision and productivity

Inventive Principle:
Principle #10Preliminary action

4Reliability

If multiple read operations are performed to increase sensing margin, then the reliability is improved, but the power consumption and time taken increase

Engineering Contradiction:
Improvesensing marginVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by stationary object

Solution Approach 1:

The patent implements dynamics by making the reference time generation adaptive to the number of read operations performed. The reference time generator adjusts the timing characteristics based on the read operation count, allowing the system to optimize the sensing window for each operation. This dynamic adjustment enables reliable multi-bit sensing with fewer repeated operations compared to conventional approaches, reducing both power consumption and time while maintaining improved sensing margin

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enhances sensing margin and reduces power consumption by stabilizing data reading regardless of capacitance variations, ensuring accurate data retrieval while minimizing energy usage.

Implementation Method 1

a first capacitor connected to the first signal line

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

a second capacitor charged by the second reference current

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 3

a sense amplifier for comparing a first reference voltage with a voltage of the first signal line

Methodology Applied
Scientific EffectVoltage comparison:

Implementation Method 4

a comparator for comparing a second reference voltage with a voltage of the second capacitor

Methodology Applied
Scientific EffectVoltage comparison:

Data Source

PatentUS9536605B2Resistive memory device and operating method
Publication Date: 2017.01.03 SAMSUNG ELECTRONICS CO LTD
  • US9536605B2 patent drawing
  • US9536605B2 patent drawing
  • US9536605B2 patent drawing

AI summary

Provided are a resistive memory device including a plurality of memory cells, and a method of operating the resistive memory device. The resistive memory device includes a sensing circuit connected to a first signal line, to which a memory cell is connected, the sensing circuit sensing data stored in the memory cell based on a first reference current; and a reference time generator for generating a reference time signal that determines a time point when a result of the sensing is to be output, based on the first reference current.