Resistive Memory Sensing Device for Data Integrity
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Solution Overview
Problem
Resistive memory devices face issues with data integrity due to insufficient writing voltage and temperature anomalies during transportation, leading to potential data corruption.
Innovation Solution
A sensing device comprising a controller, resistive random memory sensors, an access circuit, and a comparator circuit that writes and reads data, compares the read data with predetermined values, and adjusts voltages to ensure correct data storage and detect anomalies, using multiple resistive memory sensors to calibrate writing voltages and detect temperature variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If resistive memory devices are used for non-volatile storage, then higher speed and lower power consumption are achieved, but data integrity is compromised due to insufficient writing voltage and temperature anomalies
Solution Approach 1:
The patent applies preliminary action by writing predetermined data to the resistive memory sensor before actual data storage operations. This pre-written data serves as a reference for later comparison to detect whether temperature anomalies or insufficient writing voltage have occurred during transportation or operation, thereby preventing undetected data corruption.
Solution Approach 2:
The patent implements feedback through a comparison circuit that reads both the predetermined data and the actual stored data, then compares them to determine if abnormalities have occurred. This feedback mechanism allows the system to detect and respond to data integrity issues by identifying deviations from the expected predetermined values, enabling corrective actions to be taken.
2Reliability
If multiple resistive memory sensors are used for voltage calibration and temperature detection, then data integrity is improved, but device complexity increases
Solution Approach 1:
The patent applies universality by designing the resistive memory sensor to serve multiple functions simultaneously: it acts as both the storage medium for actual data and as a sensing element for detecting temperature anomalies and voltage insufficiencies. The same sensor structure is used for both data storage and integrity verification, eliminating the need for completely separate sensing components.
Solution Approach 2:
The patent merges the data storage function and the sensing/verification function into a unified system. The predetermined data and actual data are stored in the same resistive memory sensor, and the comparison circuit integrates both functions, reducing overall device complexity while maintaining reliability.
3Manufacturing precision
If writing voltage is increased to ensure correct data storage, then data integrity is improved, but power consumption and risk of temperature anomalies increase
Solution Approach 1:
The patent applies self-service by using the resistive memory sensor to automatically detect and report its own writing voltage insufficiencies and temperature anomalies. The sensor monitors its own state by comparing predetermined data with actual stored data, eliminating the need for external monitoring systems and enabling self-diagnosis of writing conditions.
Solution Approach 2:
The patent uses preliminary action by pre-writing reference data at known good voltage levels. This predetermined data serves as a baseline for comparing against subsequently written data, allowing the system to detect voltage deviations without requiring continuous high-voltage monitoring or excessive writing power.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively detects and corrects insufficient writing voltages and temperature anomalies, ensuring data integrity and reliability in resistive memory devices during transportation and operation.
Implementation Method 1
phase change memory is the most competitive next generation non-volatile memory due to its higher speed, lower power consumption, higher capacity, reliability
Implementation Method 2
The comparator circuit compares the first data with the predetermined data and transmits a comparison result to the controller
Data Source
AI summary
An embodiment of the invention provides a sensing device. The sensing device includes a controller, a Resistive random memory sensor, an access circuit and a comparator circuit. The access circuit accesses the Resistive random memory sensor. The comparator circuit is coupled to the controller and the access circuit. The controller writes a predetermined data to the Resistive random memory sensor via the access circuit. After a predetermined condition, the access circuit reads a first data from the Resistive random memory sensor. The comparator circuit compares the first data with the predetermined data and transmits a comparison result to the controller. The controller determines whether an abnormal condition occurs based on the comparison result.