Resistive Memory Write Current Optimization
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Solution Overview
Problem
Existing semiconductor memory devices face challenges in reliably writing data to resistive storage cells due to variations in resistance states, leading to errors in data determination, especially when the difference between high and low resistance states is small.
Innovation Solution
An operating method that adjusts the write current's pulse width and amount by strengthening or easing the set condition based on the success or failure of data writing, using a fail bit counter to determine the optimal condition for reliable data storage, and storing this condition for future write operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the write current is increased to improve data writing reliability, then the reliability of data writing improves, but the current consumption increases
Solution Approach 1:
The patent applies dynamics by making the write current parameters (pulse width and amount) adjustable rather than fixed. The write current generation unit dynamically modifies these parameters based on feedback from pass/fail determination results, allowing the system to adapt the current consumption to the actual writing requirements and achieve reliable data storage with minimized energy use.
Solution Approach 2:
The patent implements feedback by using pass/fail determination results to control subsequent write operations. The system determines whether data writing succeeded or failed, and uses this information to adjust the write current parameters for the next operation, creating a closed-loop control system that optimizes reliability while minimizing current consumption.
2Reliability
If the pulse width of write current is increased to improve data writing reliability, then the reliability of data writing improves, but the writing time increases
Solution Approach 1:
The patent applies dynamics by making the write current pulse width adjustable rather than fixed. The write current generation unit dynamically modifies the pulse width based on feedback from pass/fail determination results, allowing the system to adapt the writing time to the actual writing requirements and achieve reliable data storage with minimized time loss.
Solution Approach 2:
The patent implements feedback by using pass/fail determination results to control subsequent write operations. The system determines whether data writing succeeded or failed, and uses this information to adjust the pulse width for the next operation, creating a closed-loop control system that optimizes reliability while minimizing writing time.
3Reliability
If the amount of write current is increased to improve data writing reliability, then the reliability of data writing improves, but the current consumption increases
Solution Approach 1:
The patent applies dynamics by making the write current amount adjustable rather than fixed. The write current generation unit dynamically modifies the current amount based on feedback from pass/fail determination results, allowing the system to adapt the current consumption to the actual writing requirements and achieve reliable data storage with minimized energy use.
Solution Approach 2:
The patent implements feedback by using pass/fail determination results to control subsequent write operations. The system determines whether data writing succeeded or failed, and uses this information to adjust the current amount for the next operation, creating a closed-loop control system that optimizes reliability while minimizing current consumption.
Data Source
AI summary
Disclosed is an operating method of an electronic device which includes a semiconductor memory having a plurality of resistive storage cells. The operating method may include: writing data to the resistive storage cells using a write current of a set condition; determining whether the writing of data to the resistive storage cells is successful, wherein the writing of data is determined to be failed when the number of resistive storage cells with failed writing of data exceeds a reference value, and successful when the number of resistive storage cells with failed writing of data is equal to or less than the reference value; strengthening the set condition when the writing of data is determined to be failed; and easing the set condition when the writing of data is determined to be successful.