Resistor Circuit with Opposite Temperature Coefficients

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Solution Overview

Problem

Semiconductor devices and integrated circuits face temperature-dependent performance issues due to the temperature dependence of charge carrier mobility and resistivity, making it challenging to maintain consistent performance across varying temperatures.

Innovation Solution

A method of forming a resistor circuit by simultaneously doping two types of resistors with opposite temperature coefficients, allowing for compensation of temperature-dependent variations and reducing the influence of process variations, resulting in a temperature-independent resistor circuit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If separate doping processes are used for different resistor types, then manufacturing flexibility is maintained, but process variations cause temperature coefficient mismatches and reduced circuit performance

Engineering Contradiction:
Improvetemperature coefficient matchingVSAvoidprocess variation sensitivity
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent combines multiple doping operations into a single simultaneous doping process. First and second resistor regions of different types are doped together in one process step using a single dopant source, ensuring identical doping conditions. This merging eliminates process variation mismatches between separately doped regions while maintaining the ability to create different resistor types through selective masking and geometric configuration.

Inventive Principle:
Principle #5Merging (Combining)

2Manufacturing precision

If a single doping process is used for all resistors, then process variation influence is reduced, but manufacturing flexibility and ability to create different resistor types is limited

Engineering Contradiction:
Improvedoping consistencyVSAvoidresistor type variety
Core Design Contradiction:
Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The patent applies local quality by creating different resistor types within the same doped structure through selective masking and geometric configuration. First and second resistor regions are formed with different patterns, orientations, or connections to achieve different resistance values and temperature coefficients from a uniformly doped substrate, allowing versatility without sacrificing doping consistency.

Inventive Principle:
Principle #3Local quality

3Adaptability or versatility

If resistors are designed for wide temperature range operation, then circuit robustness is improved, but temperature-dependent performance variations increase

Engineering Contradiction:
Improvetemperature range coverageVSAvoidperformance consistency
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The patent creates a composite resistor circuit by combining first and second resistor regions with opposite temperature coefficients in a single doped structure. These composite regions work together to compensate for temperature-dependent performance variations, enabling wide temperature range operation while maintaining consistent circuit performance through inherent temperature compensation.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively compensates for temperature-dependent variations in resistivity and sheet resistance, making the resistor circuit less sensitive to process variations and achieving temperature independence across a wide temperature range.

Implementation Method 1

simultaneously doping a first part of the first resistor and a second part of the second resistor

Methodology Applied
Scientific EffectDoping: Dopants

Data Source

PatentUS11646137B2Resistor circuit
Publication Date: 2023.05.09 X FAB GLOBAL SERVICES GMBH
  • US11646137B2 patent drawing
  • US11646137B2 patent drawing
  • US11646137B2 patent drawing

AI summary

A method of forming a resistor circuit, the method comprising forming a first resistor comprising a first type of resistor, forming a second resistor comprising a second type of resistor, the first type of resistor being different from the second type of resistor and simultaneously doping a first part of the first resistor and a second part of the second resistor, the first resistor and the second resistor being configured such that doping of the first part of the first resistor and the second part of the second resistor defines a temperature coefficient of the first resistor and a temperature coefficient of the second resistor, wherein the temperature coefficient of the first resistor and the temperature coefficient of the second resistor have opposite signs.