Resistor-Embedded Interconnect Dielectrics for Better Heat Dissipation
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Solution Overview
Problem
The low thermal conductivity of dielectric materials in interconnection structures within semiconductor devices leads to heat dissipation issues, particularly when high resistance components like resistors are embedded, causing potential device damage.
Innovation Solution
Incorporation of dielectric layers with high thermal conductivity, such as carbon doped Si3N4 or crystalline SiCxOy, to dissipate heat generated by resistor devices, thereby preventing heat accumulation and enhancing the reliability and efficiency of semiconductor structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high resistance components are embedded in the semiconductor structure, then the functionality and performance of the IC are improved, but heat dissipation problems occur due to low thermal conductivity of dielectric materials
Solution Approach 1:
The patent changes the thermal conductivity parameter of the dielectric material by using carbon-doped Si3N4 or crystalline SiCxOy materials with specifically engineered thermal conductivity values (5-500 W/mK) to improve heat dissipation while maintaining electrical insulation properties
Solution Approach 2:
The patent employs composite dielectric materials combining silicon nitride with carbon doping or silicon oxycarbide with crystalline structure, creating materials that simultaneously provide electrical insulation and enhanced thermal conductivity for effective heat management
2Ease of manufacture
If conventional dielectric materials are used in interconnection structures, then the manufacturing process is simple, but heat accumulation causes device damages
Solution Approach 1:
The patent modifies the thermal conductivity parameter of conventional dielectric materials through carbon doping or crystalline structure formation, enabling them to dissipate heat effectively while maintaining compatibility with existing semiconductor manufacturing processes
Solution Approach 2:
The patent converts the previously harmful heat accumulation effect into a beneficial heat dissipation mechanism by selecting dielectric materials with high thermal conductivity, turning the heat generation problem into an opportunity for improved thermal management in the interconnection structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of high thermal conductivity dielectric materials effectively dissipates heat from resistor devices, improving the reliability and efficiency of semiconductor structures by preventing local heat damage.
Implementation Method 1
the low thermal conductivity of the dielectric materials in the interconnection structures may cause some heat dissipation problems
Data Source
AI summary
An interconnection structure includes a first dielectric layer, a first conductive layer disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer, a second conductive layer disposed in the second dielectric layer in electrical contact with the first conductive layer, a third dielectric layer formed over the second dielectric layer, wherein the third dielectric layer comprises silicon carbon-nitride (SiCN) based material, and a resistor device disposed in the third dielectric layer.