Resistor Circuit Layout With Supplemental Electrodes for High-Voltage Sensing
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Solution Overview
Problem
Existing semiconductor devices face challenges in effectively managing high voltage inputs, leading to potential damage from rapid voltage changes due to large potential differences between nodes in resistor circuits.
Innovation Solution
Incorporation of capacitors and supplemental electrodes to mitigate rapid voltage changes by reducing potential differences between nodes in resistor circuits, using a semiconductor device structure with high and low resistance units and dummy resistors to stabilize voltage detection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If high voltage is applied to the resistor circuit, then voltage detection capability is improved, but potential differences between nodes cause rapid voltage changes that can damage the device
Solution Approach 1:
Capacitors are connected between nodes with large potential differences to beforehand cushion against rapid voltage changes. The capacitors store charge and release it during voltage transients, preventing damaging current spikes before they can occur.
Solution Approach 2:
Supplemental electrodes are introduced as intermediary elements between existing nodes to create intermediate potential levels. These electrodes act as mediators that gradually distribute voltage changes across multiple smaller steps rather than allowing direct large potential differences.
2Reliability
If supplemental electrodes and capacitors are added to reduce potential differences, then reliability is improved, but device complexity increases
Solution Approach 1:
The supplemental electrodes serve multiple functions: they reduce potential differences between nodes, provide additional capacitance for voltage stabilization, and create intermediate connection points for capacitor placement. This multi-functionality reduces the need for separate dedicated components.
Solution Approach 2:
The patent combines the functions of voltage division, capacitance, and node stabilization into an integrated resistor circuit structure. The supplemental electrodes and capacitors are merged with the existing resistor network rather than being added as separate external components, reducing overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces the risk of damage from high voltage fluctuations, enhancing the durability and reliability of semiconductor devices by stabilizing voltage detection and improving breakdown voltage resistance.
Implementation Method 1
a first supplemental electrode AX(11) that extends in a lengthwise direction (X axis direction) of the first resistor layer (resistor R(1)) in a plan view, that is electrically connected to the first embedded electrode (BE(2)), and that has a thickness greater than a thickness of the first resistor layer (resistor R(1)); and a second supplemental electrode AX(12) that extends in the lengthwise direction, that is electrically connected to the second embedded electrode (BE(N)), that has a thickness greater than a thickness of the second resistor layer (resistor R(2)), that is adjacent to the first supplemental electrode AX(11), and that constitutes a capacitor (C11) together with the first supplemental electrode AX(11)
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, an insulating layer, and a resistor. The resistor includes a first resistor layer. A first embedded electrode is electrically connected to the first resistor layer. A second resistor layer is disposed adjacent to the first resistor layer and electrically connected to the first resistor layer. A second embedded electrode is electrically connected to the second resistor layer. A first supplemental electrode extends in a lengthwise direction of the first resistor layer, is electrically connected to the first embedded electrode, and has a thickness greater than a thickness of the first resistor layer. A second supplemental electrode extends in the lengthwise direction, is electrically connected to the second embedded electrode, has a thickness greater than a thickness of the second resistor layer, is adjacent to the first supplemental electrode, and constitutes a capacitor together with the first supplemental electrode.