Resistor Manufacturing With Metal Gate Integration
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Solution Overview
Problem
The integration of manufacturing methods for semiconductor devices, specifically resistors and transistors with metal gates, is complex and difficult to achieve without increasing process complexity.
Innovation Solution
A manufacturing method that involves forming a substrate with defined transistor and resistor regions, creating a dummy gate and resistor, removing the dummy gate and portions to form trenches, and depositing a high-k gate dielectric layer and metal structures in these trenches, resulting in a resistor with metal portions that simplify material choices and improve thermal stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional polysilicon gates are used in transistors, then the manufacturing process is simpler, but transistor performance is limited
Solution Approach 1:
The manufacturing process is segmented into distinct stages: forming the high-k gate dielectric layer first, then selectively removing it from transistor regions while preserving it in resistor regions. This segmentation allows different material treatments for different device types, enabling metal gates in transistors while maintaining polysilicon in resistors, thus improving transistor performance without uniformly complicating the entire manufacturing process.
Solution Approach 2:
The patent applies local quality by having different gate materials in different regions: metal gates in transistor regions for high performance, and polysilicon gates in resistor regions for stability. The high-k gate dielectric layer is selectively removed only from transistor areas, creating locally optimized structures that satisfy different performance requirements within the same device.
2Adaptability or versatility
If metal gates are integrated with resistors, then material choices for contacts are improved, but process complexity increases
Solution Approach 1:
The high-k gate dielectric layer is extracted (removed) selectively from transistor regions using targeted etching processes, while being preserved in resistor regions. This extraction creates the necessary structure for metal gates in transistors without affecting resistor structures, thereby expanding material choices for contact integration while avoiding unnecessary complexity in the resistor manufacturing pathway.
Solution Approach 2:
The high-k gate dielectric layer serves multiple functions: it acts as the gate dielectric for metal gates in transistor regions, and simultaneously serves as the gate dielectric for polysilicon gates in resistor regions. This multi-functionality allows a single material deposition step to support both device types, improving adaptability while minimizing additional process steps.
3Stability of the object's composition
If polysilicon is used for resistor gates, then thermal stability is limited, but manufacturing is simpler
Solution Approach 1:
The high-k gate dielectric layer is formed preliminarily across the entire substrate before any device-specific processing. This preliminary formation ensures that both transistor and resistor regions have access to the high-k material, and subsequent selective removal creates the appropriate gate structures. This approach improves thermal stability for resistors by providing the high-k dielectric option while maintaining manufacturing simplicity through a unified initial process step.
Data Source
AI summary
A manufacturing method for a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, respectively forming a transistor having a dummy gate in the transistor region and a resistor in the resistor region, removing the dummy gate and portions of the resistor to form a first trench in the transistor and two second trenches in the resistor, forming at least a high-k gate dielectric layer in the first trench and the second trenches, and forming a metal gate in the first trench and metal structures respectively in the second trenches.