Resonant Focus Ring for Edge Plasma Uniformity Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional plasma processing apparatuses and methods struggle to adequately control plasma processing parameters at the edge region of a substrate relative to the central region, leading to defects and decreased device yield due to non-uniform processing conditions and increased complexity in modifying existing apparatuses.
Innovation Solution
The use of a conductive structure, such as a resonant structure, embedded in a focus ring or pedestal to generate a localized plasma at the edge region of the substrate, allowing independent control of process conditions without altering the central region, using high frequency power to reduce sputtering and passive coupling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional plasma processing is used without edge-specific control, then the central region of the substrate achieves uniform processing conditions, but the edge region suffers from material and electrical discontinuities that alter processing conditions
Solution Approach 1:
The plasma processing system is segmented into two independent control zones: a primary plasma source for the central substrate region and a separate resonant structure for the edge region. This segmentation allows each zone to be controlled independently, addressing the edge region's unique material and electrical discontinuities without affecting the central region's uniform processing conditions.
Solution Approach 2:
The resonant structure is specifically designed to generate plasma only in the edge region of the substrate, providing localized plasma generation tailored to the edge's unique requirements. This local quality approach ensures that edge-specific processing needs are met while preserving the optimal conditions for the central region.
2Ease of operation
If existing plasma processing equipment is modified to control edge region plasma, then edge control capability is improved, but apparatus complexity increases
Solution Approach 1:
The resonant structure is designed to be integrated into existing plasma processing equipment, serving multiple functions: generating localized plasma in the edge region, providing independent edge control, and maintaining compatibility with existing apparatus architectures. This multi-functionality reduces the need for extensive modifications while adding edge control capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise control over fluxes of species at the edge region, improving yield by maintaining uniformity across the substrate while minimizing modifications to existing plasma processing equipment.
Implementation Method 1
a resonant structure disposed at the pedestal. The resonant structure is configured to generate a plasma localized at an edge region of the substrate
Implementation Method 2
The resonant structure is configured to generate a plasma localized at an edge region of the substrate
Implementation Method 3
The conductive structure is configured to generate a plasma localized along the annular shape and surrounding the interior opening
Implementation Method 4
using high frequency power to reduce sputtering and passive coupling
Implementation Method 5
using high frequency power to reduce sputtering and passive coupling
Data Source
AI summary
An apparatus for plasma processing includes a pedestal configured to support a substrate and a conductive structure disposed at the pedestal. The conductive structure is configured to generate a plasma localized at an edge region of the substrate. The conductive structure may be a resonant structure. The apparatus may include a focus ring that has an insulating material with an annular shape defining an interior opening. The conductive structure may be embedded within the insulating material and be configured to generate the plasma along the annular shape and surrounding the interior opening. Processing conditions at the edge region of the substrate may be controlled using the plasma localized at the edge region.