Resonant Gate Driver for Voltage Regulator Switching Loss
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Solution Overview
Problem
Existing voltage regulators face challenges in achieving faster response speed and higher on-chip integration, particularly in systems with high on-chip switching frequency, due to significant losses from parasitic capacitors and body diodes, which current resonant gate drivers have not adequately addressed.
Innovation Solution
A resonant gate driver configuration is introduced, utilizing PMOS and NMOS transistors, body diodes, and an inductor to control the turn-on and turn-off operations of power transistors, with a specific circuit structure that includes control gateways, switches, and body diodes to reduce switching losses and enhance response speed, connected to a voltage regulator that incorporates a feedback inductor, capacitor, control circuit, and modulation circuit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If resonant gate driver structure is used to reduce switching loss, then energy efficiency is improved, but response speed is not sufficiently increased
Solution Approach 1:
The gate driver is divided into two independent control gateways (first control gateway and second control gateway), each capable of independently controlling one power transistor. This segmentation allows parallel operation and reduces the overall switching period, thereby improving response speed while maintaining the resonant structure for energy efficiency.
Solution Approach 2:
The patent employs periodic switching control where each power transistor operates in alternating cycles. The first power transistor and second power transistor are controlled in a complementary periodic manner, allowing the system to achieve faster effective switching rate while each individual switch maintains optimized resonant switching for low loss.
2Quantity of substance
If higher on-chip integration is achieved, then device density is improved, but response speed requirement increases
Solution Approach 1:
By segmenting the control into two independent gateways, the system achieves better modularity and integration efficiency. Each control gateway can be independently optimized and integrated, allowing higher density while maintaining fast response through parallel operation.
Solution Approach 2:
The patent combines resonant switching mechanism with dual-channel parallel control structure. This merging allows the system to achieve both high integration density (through compact resonant circuit design) and fast response speed (through parallel dual-channel operation).
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution shortens the driving period by approximately 25% and increases response speed, improving the efficiency and integration of voltage regulators by optimizing the control of power transistors through pulse modulation and reduced inductor discharging times.
Implementation Method 1
two PMOS transistors, an affiliated diode of the PMOS transistors, two NMOS transistors, an affiliated diode of the NMOS transistors, and an inductor are used to control turn-on and turn-off of two power transistors
Implementation Method 2
loss of a parasitic capacitor of a power transistor
Data Source
Figure 1
Figure 2
Figure 3~4a
AI summary
The present invention relates to a voltage regulator and a resonant gate driver of the voltage regulator, where the resonant gate driver is configured to drive a first power transistor (110) and a second power transistor (120) and includes: a first control gateway (S1, S3, S5), a second control gateway (S2, S4, S6), and an inductor (LR), where: a first end of the first control gateway (S1, S3, S5) is connected to a first end of the second control gateway (S2, S4, S6); a second end of the first control gateway (S1, S3, S5) is connected to a second end of the second control gateway (S2, S4, S6) by using the inductor (LR); and a third end of the first control gateway (S1, S3, S5) is connected to the first power transistor (110), and a third end of the second control gateway (S2, S4, S6) is connected to the second power transistor (120). The resonant gate driver according to an embodiment of the present invention can reduce a driving period and increase a response speed.