Resonator Package Layout for Through-Electrode Substrate Strength

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Solution Overview

Problem

Resonator devices with through electrodes experience a decrease in strength due to the presence of these electrodes, which can compromise the structural integrity of the semiconductor substrate.

Innovation Solution

The through electrodes are positioned closer to the outer circumferential portion of the semiconductor substrate, and the lid is bonded to this area, reinforcing the substrate and maintaining strength. Additionally, a conductive protective film is used to prevent outgassing and contact failures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If through electrodes are provided to electrically couple the terminal and oscillation circuit, then electrical connection is achieved, but strength of the semiconductor substrate decreases

Engineering Contradiction:
Improveelectrical connectionVSAvoidstrength of semiconductor substrate
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The patent applies local quality by positioning through electrodes specifically in the outer circumferential region of the semiconductor substrate rather than uniformly distributing them. This localized placement in the outer region maintains electrical connectivity while preserving the strength of the central substrate area, resolving the contradiction between achieving reliable electrical connection and maintaining substrate strength.

Inventive Principle:
Principle #3Local quality

2Strength

If through electrodes are positioned in the outer circumferential region, then strength of the semiconductor substrate is maintained, but electrical connection reliability may be compromised

Engineering Contradiction:
Improvestrength of semiconductor substrateVSAvoidelectrical connection
Core Design Contradiction:
StrengthVSReliability

Solution Approach 1:

The patent applies parameter changes by optimizing the positional parameters of the through electrodes within the outer circumferential region. By carefully selecting specific locations in this region and controlling the depth and diameter parameters of the through electrodes, the invention achieves both mechanical strength maintenance and reliable electrical connection, transforming the trade-off into a optimized solution.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS20250330142A1Resonator Device
Publication Date: 2025.10.23 SEIKO EPSON CORP
  • US20250330142A1 patent drawing
  • US20250330142A1 patent drawing
  • US20250330142A1 patent drawing

AI summary

A resonator device includes a semiconductor substrate having a through hole, a resonator element provided to the semiconductor substrate, a lid which is bonded to an outer circumferential portion of a first surface of the semiconductor substrate and is configured to house the resonator element between the lid and the first surface, an oscillation circuit which is disposed on the first surface and is configured to oscillate the resonator element, a terminal disposed on a second surface of the semiconductor substrate, and a through electrode which is provided to the through hole and is configured to electrically couple the terminal and the oscillation circuit, wherein the through electrode is disposed closer to the outer circumferential portion than to a center of the first surface in a plan view of the semiconductor substrate.