Acoustic Resonator Perimeter Structures for Lower RF Complexity

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Conventional RF technologies in mobile devices face limitations, leading to drawbacks such as increased RF complexity and performance issues due to the coexistence of new and legacy standards, and the growing demand for higher data rates.

Innovation Solution

The development of a single crystal acoustic resonator device using wafer level technologies, which involves forming metal electrodes with varying geometric areas and perimeter structures coupled with a piezoelectric layer, and ion implantations to enhance device performance metrics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If conventional RF technology is used to support multiple standards, then device compatibility is improved, but RF complexity increases

Engineering Contradiction:

Improvedevice compatibilityVSAvoidRF complexity

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent segments the resonator structure into distinct functional regions including perimeter structures, sandbar structures, and varying geometric area cavities. This segmentation allows different portions of the resonator to independently support different RF standards, enabling multi-standard operation without requiring a single complex resonator design.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent applies local quality by creating regions with different geometric properties within the resonator structure. Specific areas have different cavity sizes, electrode configurations, and material compositions tailored to optimize performance for particular RF standards, allowing the device to adapt to multiple standards through localized structural variations.

Inventive Principle:

Principle #3Local quality

2Reliability

If device performance metrics are increased through ion implantations and geometric variations, then reliability is improved, but manufacturing precision requirements increase

Engineering Contradiction:

Improvedevice performanceVSAvoidgeometric precision

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent performs ion implantations and establishes geometric configurations during the manufacturing process before final device operation. By pre-configuring the resonator structures with specific geometric areas, perimeter features, and material compositions during fabrication, the device achieves enhanced performance metrics without requiring post-manufacturing adjustments or extremely tight tolerances during assembly.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent utilizes parameter changes through ion implantation to modify material properties and geometric characteristics of the resonator structures. By changing parameters such as doping concentration, material composition, and geometric dimensions during manufacturing, the device achieves improved reliability and performance while working within standard manufacturing precision capabilities.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves the performance of acoustic resonator devices by increasing their efficiency and adaptability to varying standards, addressing the limitations of conventional RF technologies and supporting higher data rate requirements.

Implementation Method 1

forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer

Methodology Applied

Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 2

Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics

Methodology Applied

Scientific EffectIon implantation: Ion Implantation

Data Source

PatentUS11165404B2Method for fabricating an acoustic resonator device with perimeter structures

Publication Date: 2021.11.02 AKOUSTIS TECHNOLOGIES CORP

AI summary

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.