Responsive Layer Stress Tuning for Low-Frequency LWR Reduction

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Solution Overview

Problem

Existing semiconductor manufacturing processes face challenges in reducing low frequency line width roughness (LWR) in extreme ultraviolet (EUV) patterning, which cannot be effectively addressed through etching processes.

Innovation Solution

A method involving a responsive layer, such as silicon or silicon nitride, is treated with UV exposure or thermal oxidation to induce tensile stress, causing a volumetric change that straightens sidewall profiles and reduces low frequency LWR.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a responsive layer is added to reduce low frequency LWR, then low frequency LWR is improved, but process complexity increases

Engineering Contradiction:
Improvelow frequency LWRVSAvoidpatterning stack structure
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The responsive layer serves multiple functions: it acts as a structural layer in the patterning stack, provides a platform for low frequency LWR reduction through responsive treatment, and maintains compatibility with standard etching processes for high frequency LWR control. This multi-functionality justifies the added structural element.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The responsive layer's properties are changed through a dedicated treatment process that induces tensile stress, transforming the layer's mechanical state to reduce low frequency LWR. This parameter change approach allows low frequency LWR reduction without fundamentally altering the etching process parameters.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If tensile stress is induced in the responsive layer to straighten sidewalls, then low frequency LWR is reduced, but additional treatment steps are required

Engineering Contradiction:
Improvesidewall profileVSAvoidpatterning process throughput
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The responsive layer is prepared in advance with the capability to undergo tensile stress treatment, allowing the low frequency LWR reduction to occur before final pattern transfer. This preliminary action ensures that the sidewall straightening is completed prior to subsequent patterning steps, maintaining productivity.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The induced tensile stress in the responsive layer significantly reduces low frequency LWR, improving pattern transfer quality by straightening sidewalls and enhancing subsequent patterning into underlying layers.

Implementation Method 1

treating the responsive layer with an ultraviolet (UV) radiation exposure or a thermal oxidation in order to induce a tensile stress in the responsive layer

Methodology Applied
Scientific EffectPhoto-oxidation: Photo-oxidation

Implementation Method 2

treating the responsive layer with an ultraviolet (UV) radiation exposure or a thermal oxidation in order to induce a tensile stress in the responsive layer

Methodology Applied
Scientific EffectOxidation: Oxidation

Data Source

PatentUS20260068556A1Responsive layer for low frequency line width roughness reduction
Publication Date: 2026.03.05 APPLIED MATERIALS INC
  • US20260068556A1 patent drawing
  • US20260068556A1 patent drawing
  • US20260068556A1 patent drawing

AI summary

Embodiments described herein relate to a method that includes forming a pattern in a resist layer that is provided over a patterning stack that includes a responsive layer. In an embodiment, the method may include transferring the pattern into the responsive layer, and applying a treatment to the responsive layer. In an embodiment, the treatment induces a tensile stress in the responsive layer and reduces a line width roughness (LWR) of the pattern.