Semiconductor Layer Structure for High-Breakdown RESURF Termination
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in achieving high breakdown voltage and reliability due to non-depleted regions where field plate electrodes are not arranged, leading to potential dielectric breakdown and complex manufacturing processes.
Innovation Solution
The semiconductor device incorporates a specific layer structure with n−-type and p−-type termination layers and RESURF layers, along with field plate electrodes, to facilitate depletion layer spread and simplify manufacturing, thereby enhancing breakdown voltage and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If field plate electrodes are arranged in conventional semiconductor devices, then breakdown voltage can be improved, but non-depleted regions remain where dielectric breakdown may occur and manufacturing becomes complex
Solution Approach 1:
The patent applies local quality by creating different impurity concentration regions (n- type and p- type termination layers with lower impurity concentrations than adjacent regions) at specific locations around the drift region. This local modification of material properties ensures complete depletion of the drift region while maintaining high breakdown voltage and reliability, eliminating non-depleted regions without requiring complex field plate electrode arrangements.
2Strength
If field plate electrodes are arranged in conventional semiconductor devices, then breakdown voltage can be improved, but manufacturing process becomes complex
Solution Approach 1:
The patent employs parameter changes by modifying the impurity concentration parameters in the semiconductor layers. Specifically, n- type and p- type termination layers are formed with lower impurity concentrations than the adjacent drift and base regions, respectively. This parameter modification approach achieves high breakdown voltage without the need for complex field plate electrode structures, thereby simplifying the manufacturing process.
3Ease of manufacture
If conventional semiconductor device structures are used, then manufacturing is simpler, but on-resistance increases and breakdown voltage decreases
Solution Approach 1:
The patent applies local quality by creating different impurity concentration regions (n- type and p- type termination layers with lower impurity concentrations than adjacent regions) at specific locations around the drift region. This local modification of material properties ensures complete depletion of the drift region while maintaining high breakdown voltage and reliability, eliminating non-depleted regions without requiring complex field plate electrode arrangements.
Solution Approach 2:
The patent employs composite materials by combining multiple semiconductor layers with different conductivity types and impurity concentrations (n+ type drain layer, n- type drift layer, p- type base layer, n- type termination layer, p- type RESURF layer). This composite structure optimizes both electrical performance (low on-resistance, high breakdown voltage) and manufacturing feasibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure achieves both high breakdown voltage and low on-resistance, ensuring reliable operation by preventing dielectric breakdown and simplifying the manufacturing process.
Implementation Method 1
a fifth semiconductor layer provided around the second semiconductor layer on the first semiconductor layer, the fifth semiconductor layer of the first conductivity type and having a lower concentration of impurities of the first conductivity type than the second semiconductor layer, or the fifth semiconductor layer of the second conductivity type
Data Source
AI summary
A semiconductor device according to an embodiment includes: a first electrode; a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type; a third semiconductor layer of a second conductivity type; a fourth semiconductor layer of the first conductivity type; a fifth semiconductor layer provided around the second semiconductor layer on the first semiconductor layer, the fifth semiconductor layer of the first conductivity type, or the fifth semiconductor layer of the second conductivity type; a second electrode; a third electrode facing the second semiconductor layer and the third semiconductor layer; and a fourth electrode provided in the fifth semiconductor layer adjacent to the second semiconductor layer, the fourth electrode being spaced apart from the first insulating film, and the fourth electrode facing the fifth semiconductor layer.