Memory Cell Reload Circuit for High-Energy Particle Collisions
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Solution Overview
Problem
Current memory devices in aerospace and high-altitude applications are vulnerable to high-energy particle collisions, leading to undesirable state changes in memory cells, which existing solutions like Triple Modular Redundancy (TMR) systems are costly and complex to implement, especially when RF functions are involved.
Innovation Solution
A memory device with retention, detection, and management means to automatically correct high-energy particle-induced state changes, using a D flip-flop memory cell, RC circuit for retention, Schmitt trigger for signal smoothing, and multiplexers for management, allowing for autonomous data reloading without the need for a clock signal that disrupts RF functions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Triple Modular Redundancy (TMR) systems are used to correct high-energy particle effects, then reliability is improved, but device complexity and manufacturing cost increase significantly
Solution Approach 1:
The patent extracts the essential function of TMR (detecting and correcting particle-induced errors) and implements it through a simplified architecture using a single memory cell with retention means, detection means, and management means, eliminating the need for three redundant cells and voting logic while maintaining error correction capability
Solution Approach 2:
The memory device is segmented into distinct functional blocks: retention means (for storing a copy of the data), detection means (for comparing current and retained values), and management means (for controlling reload operations). This modular segmentation simplifies the overall system while achieving TMR-like reliability
2Reliability
If TMR systems with voting elements are implemented, then reliability is improved, but manufacturing cost increases
Solution Approach 1:
The patent uses a single memory cell instead of three redundant cells, significantly reducing the amount of hardware required. The retention means stores a temporary copy that can be discarded after correction, eliminating the need for permanent redundant structures and reducing manufacturing costs
3Reliability
If clock signals are used for refreshing data in TMR systems, then reliability is improved, but RF functions are disrupted due to spectral pollution
Solution Approach 1:
The patent removes the clock signal from the memory correction system by using asynchronous detection and management means that operate independently of periodic refreshing, thereby eliminating spectral pollution that would interfere with RF functions while maintaining the ability to detect and correct SEU errors
4Device complexity
If a single memory cell is used instead of TMR, then device complexity is reduced, but reliability against high-energy particles deteriorates
Solution Approach 1:
The retention means performs preliminary action by storing a copy of the data before a potential SEU event can affect the memory cell. This pre-stored copy enables subsequent comparison and correction, providing reliability protection while using only a single memory cell
Solution Approach 2:
The detection means continuously compares the current memory cell value with the retained value and provides feedback to the management means. This feedback mechanism enables automatic detection and correction of SEU errors, compensating for the absence of redundant memory cells and maintaining high reliability
Data Source
AI summary
A memory device automatically correcting the effect of collisions of high-energy particles, comprising at least one memory cell, and further comprising: retention means for retaining, for a determined period, a single copy of the stored value stored in said memory cell; detection means for detecting a change of state of said memory cell, by comparing the stored value stored in said memory cell with the value in retention in said retention means; and management means suitable for determining whether a detected change of state of said memory cell is due to a high-energy particle and, in which case, to automatically command a reloading of the stored value stored in said retention means into said memory cell.