Reticle Mark Arrangement for Misalignment Measurement

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Solution Overview

Problem

In semiconductor manufacturing, misalignment of upper and lower layers can lead to device performance degradation and wiring short-circuits, necessitating accurate measurement and correction of layer alignment.

Innovation Solution

The method involves arranging reticle marks in a kerf region of a reticle, calculating the area of polygons at their arrangement positions, and deciding these positions based on the calculated area to maximize coverage and minimize overlap, allowing for precise measurement and correction of misalignment between layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If reticle marks are arranged in the kerf region, then misalignment measurement accuracy is improved, but mark arrangement complexity increases

Engineering Contradiction:
Improvemisalignment measurement accuracyVSAvoidmark arrangement complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by pre-calculating and storing multiple candidate reticle mark arrangement patterns with their corresponding polygon areas before actual use. When marks need to be arranged, the system simply selects from these pre-prepared patterns based on the polygon area, avoiding complex real-time calculations and reducing operational complexity while maintaining measurement accuracy.

Inventive Principle:
Principle #10Preliminary action

2Area of stationary object

If reticle marks are positioned to maximize polygon area, then measurement coverage is improved, but arrangement difficulty increases

Engineering Contradiction:
Improvepolygon area coverageVSAvoidarrangement difficulty
Core Design Contradiction:
Area of stationary objectVSEase of manufacture

Solution Approach 1:

The system performs preliminary calculations to determine optimal reticle mark arrangement patterns that maximize polygon area coverage. These optimal patterns are stored in advance, allowing the manufacturing process to simply implement the pre-determined optimal arrangement without facing the complexity of real-time optimization calculations.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent changes the parameter of polygon area as the optimization criterion for reticle mark arrangement. By focusing on maximizing the polygon area formed by connecting reticle mark positions, the system transforms a complex multi-dimensional arrangement problem into a more manageable single-parameter optimization that can be pre-calculated and stored.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If multiple reticle marks are arranged in the kerf region, then misalignment detection capability is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvemisalignment detection capabilityVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent segments the kerf region into multiple discrete reticle mark positions, each contributing to the overall misalignment detection capability. By dividing the measurement function into multiple independent mark positions whose relative positions form a polygon, the system improves detection reliability while maintaining manageable manufacturing complexity through standardized mark patterns.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS9396299B2Reticle mark arrangement method and nontransitory computer readable medium storing a reticle mark arrangement program
Publication Date: 2016.07.19 KIOXIA CORP
  • US9396299B2 patent drawing
  • US9396299B2 patent drawing
  • US9396299B2 patent drawing

AI summary

Reticle marks are arranged at a plurality of places in a kerf region of a reticle, the area of a polygon with apexes at arrangement positions of the reticle marks is calculated, and the arrangement positions of the reticle marks are decided based on results of calculation of the area of the polygon.