Reticle Data Generation with Phase-Shifted Auxiliary Patterns
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Solution Overview
Problem
Conventional optical proximity correction (OPC) methods for reticle pattern generation do not effectively consider the overlap of auxiliary patterns with phase shifts of 0° and 180°, leading to suboptimal pattern formation and image quality in semiconductor manufacturing.
Innovation Solution
A method for generating reticle data that includes determining main and auxiliary patterns based on aerial images, with overlapping auxiliary patterns being deleted or deformed to ensure phase alignment and minimize interference, thereby improving pattern accuracy and image quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If auxiliary patterns with phase shifts of 0° and 180° are inserted to correct optical proximity effects, then pattern formation accuracy is improved, but overlapping auxiliary patterns cause interference and reduce image quality
Solution Approach 1:
The patent converts the harmful interference effect of overlapping auxiliary patterns into a beneficial correction mechanism. By intentionally allowing overlapping patterns with opposite phase shifts (0° and 180°) to interfere destructively, the method cancels out unwanted diffraction effects and improves overall pattern formation accuracy on the substrate.
Solution Approach 2:
The patent changes the phase shift parameter of auxiliary patterns from a single value to multiple values (0° and 180°). This parameter variation allows the system to control interference effects constructively, where overlapping patterns with different phase shifts can be used to correct optical proximity errors rather than merely causing degradation.
2Manufacturing precision
If conventional OPC methods are used to generate reticle patterns, then pattern correction is achieved, but overlapping auxiliary patterns are not properly handled leading to suboptimal image quality
Solution Approach 1:
The patent implements a feedback mechanism where the optical image is calculated and evaluated after auxiliary patterns are inserted. Based on this evaluation, the positions, sizes, or phase shifts of auxiliary patterns are adjusted to eliminate overlapping interference. This iterative feedback process ensures that the final reticle pattern achieves both correction accuracy and image quality consistency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the precision and accuracy of reticle pattern generation, reducing errors and improving the fidelity of pattern transfer onto substrates, particularly in the context of semiconductor and micromechanical device manufacturing.
Implementation Method 1
light having passed through the first auxiliary pattern and light having passed through the main pattern being in phase
Implementation Method 2
light having passed through the second auxiliary pattern and light having passed through the main pattern having a phase difference of 180° from each other
Implementation Method 3
the formation of such fine patterns is greatly affected by diffraction of light
Data Source
AI summary
A method of generating reticle data for producing a reticle, a pattern of the reticle including a main pattern, a first auxiliary pattern, and a second auxiliary pattern, the first auxiliary pattern and the second auxiliary pattern being patterns not to resolve, light having passed through the first auxiliary pattern and light having passed through the main pattern being in phase, and light having passed through the second auxiliary pattern and light having passed through the main pattern having a phase difference of 180° from each other, the method comprising the step of deleting either of the first auxiliary pattern and the second auxiliary pattern or deforming at least either of the first auxiliary pattern and the second auxiliary pattern when the first auxiliary pattern and the second auxiliary pattern overlap each other.


