Semiconductor Reticle-Writing Correction for Exposure Overlay Accuracy
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Solution Overview
Problem
The impact of minute errors in exposure processes for semiconductor layers has increased with miniaturization and high integration, affecting the quality of semiconductor products, necessitating improved precision in exposure process simulation.
Innovation Solution
A semiconductor device manufacturing method that includes determining the need for reticle writing correction, applying it to masks, measuring and correcting overlays, and performing subsequent processes only when specifications are met, with alignment corrections and skew value management to ensure precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional exposure process is used without reticle writing correction, then manufacturing process is simpler and faster, but alignment precision and manufacturing quality deteriorate due to minute errors
Solution Approach 1:
The patent performs preliminary alignment measurements and determines reticle writing correction values before actual mask manufacturing. This advance preparation allows the correction parameters to be calculated and applied in advance, ensuring high alignment precision without adding complexity to the actual exposure process.
Solution Approach 2:
The patent implements a feedback mechanism where alignment correction parameters are measured from the scanner, used to determine reticle writing correction values, and then applied to subsequent mask manufacturing. This closed-loop feedback ensures continuous improvement of alignment precision while maintaining process efficiency.
2Manufacturing precision
If reticle writing correction is applied to masks, then alignment precision improves, but manufacturing time and process complexity increase
Solution Approach 1:
The patent performs reticle writing correction determination in advance before mask manufacturing. By calculating the correction values beforehand based on alignment measurements, the actual mask production can proceed efficiently without time-consuming adjustments during manufacturing, thus reducing overall cycle time while maintaining high overlay accuracy.
Solution Approach 2:
The system uses the scanner's own alignment correction parameters to determine the reticle writing correction values. This self-service approach eliminates the need for separate measurement equipment or external calibration processes, reducing manufacturing time while improving overlay accuracy through precise self-correction.
3Reliability
If multiple measurements and corrections are performed, then product quality and reliability improve, but production efficiency decreases
Solution Approach 1:
The patent combines multiple measurement and correction steps into an integrated process flow. Alignment measurements, reticle writing correction determination, and mask manufacturing are merged into a unified workflow where correction values are determined and applied continuously, ensuring high product reliability without significant loss in production efficiency.
Solution Approach 2:
The patent maintains continuous useful action by performing alignment measurements and determining correction values without interrupting the mask manufacturing flow. The reticle writing correction is applied continuously throughout the exposure process, ensuring consistent product reliability while maintaining high production efficiency through uninterrupted manufacturing operations.
Data Source
AI summary
A semiconductor device manufacturing method includes determining whether or not a reticle writing correction needs to be applied to a mask for an exposure process, when determining that the reticle writing correction needs to be applied, manufacturing the mask to which the reticle writing correction is applied by using the mask to which the reticle writing correction is applied, measuring an overlay and performing a correction based on the basis of on the measured overlay, determining whether or not a value of the measured overlay is greater than a specification, and when the value of the measured overlay is not greater than the specification, performing a subsequent process.