Reticle-Zone Interconnection Bridges for Dense IC Stack Links
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Solution Overview
Problem
Current integrated circuit packages face limitations in interconnect density and bandwidth between stacked devices due to long interconnection distances and high costs associated with silicon interposers and reticle stitching methods, which restrict the potential for high-speed connections and efficient communication between integrated circuit device stacks.
Innovation Solution
The integration of a monolithic substrate with multiple reticle zones and a bridge that electrically connects these zones, allowing for high-density interconnects and reducing the need for expensive silicon interposers, while minimizing the length of bridge lines to enhance bandwidth and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a silicon interposer with through silicon vias is used to form high-speed connections between integrated circuit device stacks, then interconnect density and bandwidth are improved, but manufacturing cost increases significantly
Solution Approach 1:
The invention divides the substrate into multiple reticle zones that can be manufactured separately using standard lithographic reticles, then combines them through bridge structures. This segmentation allows high-density interconnects to be formed within each zone without requiring expensive full-wafer silicon interposers, thereby reducing manufacturing cost while maintaining interconnect density.
Solution Approach 2:
The invention introduces bridge structures as intermediary elements that connect different reticle zones on the substrate. These bridges provide the necessary high-speed connections between integrated circuit device stacks without requiring a complete silicon interposer, thus achieving high interconnect density at reduced cost by using bridges only where needed rather than across the entire substrate.
2Productivity
If reticle stitching is used to form high-density wiring layers across reticle boundaries, then interconnect density is improved, but additional expensive fabrication processes are required
Solution Approach 1:
The substrate is segmented into multiple reticle zones that are manufactured using standard lithographic processes for each zone. Instead of requiring complex reticle stitching to combine them, the invention uses bridge structures that can be formed with conventional fabrication techniques, thereby achieving high interconnect density without increasing fabrication process complexity.
Solution Approach 2:
The invention uses bridge structures that are localized and temporary in nature, connecting reticle zones only where high-speed connections are needed. These bridges replace the need for expensive and complex reticle stitching processes across the entire substrate, achieving the same interconnect density benefit with simpler, more cost-effective fabrication processes.
3Productivity
If bridges are embedded in substrate to support dense integrated circuit device interconnects, then interconnect density is improved, but interconnection distance increases and bandwidth is limited by bump pitch
Solution Approach 1:
The invention applies bridge structures locally only at specific locations where high-speed connections between reticle zones are required, rather than embedding bridges throughout the entire substrate. This localized approach minimizes the additional interconnection distance introduced by bridges while achieving high interconnect density at critical interfaces between integrated circuit device stacks.
Data Source
AI summary
An integrated circuit assembly may be formed having a first level structure that comprises a monolithic substrate with a first reticle zone including integrated circuitry and a second reticle zone including integrated circuitry, and a second level structure comprising at least one integrated circuit device electrically attached to the integrated circuitry of the first reticle zone of the first level structure and a bridge electrically attaching the integrated circuitry of the first reticle zone of the first level structure and the integrated circuitry of the second reticle zone of the first level structure.