Reverse Conducting IGBT Cells for Dual-Mode Operation and Monitoring
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Solution Overview
Problem
There is a need for highly efficient and reliable power semiconductor devices with reduced manufacturing efforts and costs, capable of efficiently conducting current in both forward and reverse operating modes while monitoring physical quantities such as temperature and current.
Innovation Solution
A semiconductor device comprising a plurality of forward conducting insulated-gate bipolar transistor cells and reverse conducting insulated-gate bipolar transistor cells, configured to operate in both forward and reverse modes, with a method involving a resistor to measure current and voltage across the cells, allowing for efficient current conduction and temperature monitoring without additional temperature sense diodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If additional temperature sense diodes are added for monitoring, then measurement precision is improved, but device complexity and manufacturing costs increase
Solution Approach 1:
The reverse conducting IGBT cells serve dual purposes: they enable reverse current conduction functionality and simultaneously provide temperature monitoring capability through the resistor coupling method. This eliminates the need for separate temperature sense diodes, as the same cell structure and operating conditions serve both current conduction and temperature measurement functions.
Solution Approach 2:
The semiconductor device uses its own operational characteristics (voltage across the resistor during reverse operating mode) to monitor its own temperature and current conditions. The reverse conducting cells and associated resistors provide self-diagnostic capability without requiring external monitoring components.
2Adaptability or versatility
If reverse conducting cells are added to enable reverse mode operation, then adaptability is improved, but device complexity increases
Solution Approach 1:
The semiconductor device is divided into functionally distinct segments: forward conducting IGBT cells for primary current conduction and reverse conducting IGBT cells for reverse mode operation. This segmentation allows each cell type to be optimized for its specific function while working together in an integrated device structure.
Solution Approach 2:
The device dynamically switches between forward and reverse operating modes by activating appropriate cell types. The reverse conducting cells are specifically designed to handle reverse current flow, allowing the device to adapt its conduction path based on the operating mode requirements.
3Ease of manufacture
If manufacturing efforts are reduced to lower costs, then ease of manufacture is improved, but manufacturing precision may worsen
Solution Approach 1:
The device uses homogeneous manufacturing processes for both forward conducting and reverse conducting IGBT cells, as both are fabricated using the same base IGBT cell structure and doping techniques. This homogeneity in manufacturing methodology maintains consistent process control and quality standards while enabling cost-effective production.
Data Source
AI summary
A semiconductor device includes a plurality of forward conducting insulated-gate bipolar transistor cells configured to conduct a current in a forward operating mode of the semiconductor device and to block a current in a reverse operating mode of the semiconductor device. The semiconductor device also includes a plurality of reverse conducting insulated-gate bipolar transistor cells configured to conduct a current both in the forward operating mode and in the reverse operating mode. A corresponding method for operating a semiconductor device is also disclosed.