Reverse-Tapered Silicon Mask for Precise Display Deposition
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Solution Overview
Problem
Existing deposition processes in display device manufacturing often result in deposition material being deposited in areas other than intended, leading to issues like stains and color mixing, and the process is prone to errors due to wafer turning during etching.
Innovation Solution
A mask with a first layer and a second layer featuring a reverse-tapered deposition pattern, where the second layer includes silicon with a specific crystal orientation, and an insulating layer is used, along with an etching process that avoids wafer turning, ensuring precise deposition and minimizing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional mask structure is used, then the manufacturing process is simple, but deposition material is deposited in areas other than intended, causing stains and color mixing
Solution Approach 1:
The mask is divided into multiple layers: a first mask layer and a second mask layer, each serving distinct functions. The first mask layer defines the basic pattern, while the second mask layer with reverse-tapered side surfaces prevents deposition material from reaching unintended areas, thereby improving deposition accuracy without requiring complete redesign of the entire mask structure
Solution Approach 2:
The solution introduces a dimensional change by creating reverse-tapered side surfaces on the second mask layer. This angular geometry adds a spatial dimension that physically blocks deposition material from traveling laterally to unintended areas, solving the precision problem through geometric configuration rather than relying solely on planar mask patterns
2Ease of manufacture
If wafer turning is performed during etching, then the etching process can be completed, but the process becomes prone to errors
Solution Approach 1:
The mask structure is designed in advance with the reverse-tapered second mask layer that compensates for potential etching errors. This preliminary design ensures that even if wafer turning causes minor deviations, the reverse-tapered geometry maintains the intended functionality and prevents deposition material leakage, thereby improving process reliability
Solution Approach 2:
The reverse-tapered side surfaces act as a cushioning design that tolerates potential errors from wafer turning during etching. The angular configuration provides a buffer zone that absorbs minor positioning errors or dimensional variations, preventing them from causing deposition material to reach unintended areas
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents deposition material from being deposited outside intended areas, enhancing display quality and reducing process-related errors, thereby improving the reliability and efficiency of the manufacturing process.
Implementation Method 1
forming a second layer including a deposition pattern having a reverse-tapered shape in a cross-sectional view by etching a preliminary second layer disposed below the preliminary first layer
Data Source
AI summary
A mask includes a first layer defining a first opening, and a second layer disposed on the first layer, where the second layer includes a deposition pattern having a reverse-tapered shape in a cross-sectional view. The deposition pattern defines second openings overlapping the first opening in a plan view, and the second layer includes silicon having a crystal orientation of <100>.