Reverse Voltage Recovery Boost Circuit for Power Systems
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Solution Overview
Problem
Reverse voltage conditions in electrical circuits, where output voltage exceeds input voltage, can cause damage by allowing current to flow back into the input, leading to inefficiencies and potential damage to components due to the high power loss associated with traditional diode-based protection methods.
Innovation Solution
A power circuit with a reverse voltage detector and a reverse voltage recovery boost circuit that includes a series connection of conductive energy storage devices, where the boost circuit transfers power from a second transistor to a first transistor after a fault clears, rapidly transitioning the first transistor from a non-conductive to a conductive state to allow power transfer from the input voltage to the output voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a diode is used in the reverse voltage protection circuit, then the circuit is protected from reverse voltage damage, but the power loss increases at high current loads
Solution Approach 1:
The patent changes the operating parameters of the protection circuit by using transistors that can operate in different states (cut-off, active, saturation) compared to a diode's fixed unidirectional conduction. The first transistor M1 and second transistor M2 are controlled to provide protection while maintaining lower power loss through optimized conduction states and gate control signals.
Solution Approach 2:
The patent replaces the passive mechanical diode structure with an active electronic system using transistors and control circuits. This substitution allows for dynamic control of the protection mechanism, enabling the circuit to respond to reverse voltage conditions while minimizing power loss through controlled conduction paths and timing.
2Reliability
If a traditional reverse voltage protection circuit is used, then the circuit is protected from reverse voltage, but the recovery time is slow (milliseconds)
Solution Approach 1:
The patent applies preliminary action by pre-charging the gate of the first transistor M1 through the second transistor M2 before the reverse voltage condition occurs. The charge pump circuit CP pre-charges the gate capacitor, so when reverse voltage is detected, the protection action can begin immediately without waiting for gradual charging, thus reducing recovery time to microseconds.
Solution Approach 2:
The patent uses periodic action through the charge pump circuit that operates in discrete phases to charge and discharge the gate capacitor of the first transistor. This periodic charging mechanism allows rapid switching between protective and conductive states, enabling fast recovery from reverse voltage conditions while maintaining protection.
3Reliability
If the first transistor remains in non-conductive state after fault clears, then protection is maintained, but power transfer from input to output is blocked
Solution Approach 1:
The patent implements feedback by continuously monitoring the voltage conditions at the gate of the first transistor M1 through the second transistor M2 and charge pump circuit. When the reverse voltage condition clears and normal operation is detected, the control circuit receives feedback and automatically adjusts the gate charge state to enable power transfer, thus maintaining both protection and productivity dynamically.
Solution Approach 2:
The patent applies dynamics by making the conduction state of the first transistor M1 dynamic rather than static. The transistor transitions between non-conductive and conductive states based on real-time voltage conditions detected by the control circuit. This dynamic control allows the circuit to maintain protection during reverse voltage while enabling efficient power transfer during normal operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution significantly reduces the reverse voltage recovery time from milliseconds to microseconds, minimizing voltage dips, power dissipation, and the likelihood of false tripping of protection features, while avoiding interference with other circuit protection devices.
Implementation Method 1
the reverse voltage recovery boost circuit transfers a portion of power stored in the second transistor to the first transistor thereby transitioning the first transistor from a non-conductive state to a conductive state
Data Source
AI summary
A power circuit having a reverse voltage recovery boost circuit that speeds up a recovery time of the power circuit after a reverse voltage condition has cleared is provided. The power circuit includes a reverse voltage detector that detects the reverse voltage condition. After the reverse voltage condition clears, the reverse voltage recovery boost circuit transfers a portion of power to one transistor that is stored in another transistor thereby transitioning the one transistor from a non-conductive state to a conductive state, which allows a transfer of power from the input voltage to the output voltage.