Reversed-Diode Power Module Layout for Lower EMI and Heat Loss
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Solution Overview
Problem
Existing half-bridge modules in automotive applications face challenges with high operation voltages and switching frequencies, leading to increased electromagnetic radiation and losses, which are not adequately addressed by current silicon semiconductors.
Innovation Solution
A power semiconductor module design featuring a semiconductor switch chip and diode chip arranged in the same conduction direction, interconnected anti-parallel by substrates with structured metallization layers, where the diode's anode side is better cooled through a heat sink, utilizing wide bandgap materials like GaN or SiC for improved performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high bandgap semiconductors are used for higher operation voltages and switching frequencies, then efficiency is improved, but thermal conduction is worsened
Solution Approach 1:
The module separates the diode chip into two independent cooling paths: one through the anode side to the heat sink, and another through the cathode side to the auxiliary substrate. This segmentation allows optimized thermal management for each side based on its specific heat generation characteristics, improving overall thermal conduction efficiency while maintaining high switching frequency operation.
Solution Approach 2:
The patent applies different cooling strategies to different regions of the diode chip. The anode side is cooled by the heat sink while the cathode side is cooled by the auxiliary substrate, with each cooling path optimized for its local thermal requirements. This local quality approach addresses the thermal conduction limitations of high bandgap semiconductors by providing region-specific thermal management.
2Ease of manufacture
If conventional diode mounting is used, then manufacturing is simplified, but cooling efficiency is reduced
Solution Approach 1:
Instead of the conventional approach where only the cathode side is mounted to the substrate, this patent inverts the mounting strategy by bonding the anode side to the heat sink and the cathode side to the auxiliary substrate. This inverted configuration enables both sides of the diode chip to be actively cooled, significantly improving cooling efficiency while remaining manufacturable through standard bonding processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design reduces electromagnetic radiation and losses by enhancing cooling efficiency, particularly at the diode's anode side, allowing for higher switching frequencies and operation voltages while minimizing conductor loops and heat transfer inefficiencies.
Implementation Method 1
the anode side of the diode chip is better cooled than the cathode side
Data Source
AI summary
A power semiconductor module may include one or more of the following: a main substrate having at least one metallization layer; a semiconductor switch chip with a positive terminal on a positive terminal side and a negative terminal on a negative terminal side opposite to the positive terminal side adapted for switching a current from the positive terminal to the negative terminal; a diode chip with an anode on an anode side and a cathode on a cathode side opposite to the anode side adapted for blocking a current from the cathode to the anode, where the diode chip is bonded to the second area; a heat sink connected to the main substrate opposite to the semiconductor switch chip and the diode chip; and an auxiliary substrate having at least one metallization layer.