RF Amplifier Common Capacitance for Thermal Management

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Solution Overview

Problem

Conventional RF amplifiers used in wireless communications, particularly in base transceiver stations, face challenges in being compact, thermally efficient, and handling modulated signals with high Peak-to-Average Ratio (PAR), leading to inefficiencies and increased heat dissipation needs.

Innovation Solution

The design incorporates a push-pull RF amplifier configuration with balanced/unbalanced transformers and a common capacitance shared between RF signal paths, reducing the capacitance seen by modulators and minimizing peak-power dispersion, utilizing gallium nitride (GaN) and silicon-based power transistor technologies, and employing envelope tracking for efficient power delivery.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If conventional RF amplifier configuration is used, then the amplifier can handle RF signals, but it generates excessive heat and requires large capacitors

Engineering Contradiction:
Improvethermal dissipationVSAvoidcapacitor size
Core Design Contradiction:
TemperatureVSEase of manufacture

Solution Approach 1:

The patent merges the capacitance functions of multiple RF signal paths into a single shared capacitance. The common capacitance value is selected to satisfy the maximum capacitance requirement across all operating conditions, replacing multiple large capacitors with one smaller shared capacitor, thereby reducing thermal dissipation and simplifying manufacturing.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The shared capacitance serves multiple functions simultaneously - it provides capacitance for all RF signal paths, acts as a common reference for modulator connections, and handles peak-power dispersion for the entire amplifier assembly. This multi-functionality reduces the overall component count and thermal load.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Adaptability or versatility

If separate capacitances are used for each RF signal path, then each path can be optimized independently, but the overall device size and complexity increase

Engineering Contradiction:
Improvesignal path optimizationVSAvoidcapacitance configuration
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

Multiple separate capacitance functions are merged into a single shared capacitance element. The common capacitance is connected to the current conducting terminals of transistors across different RF signal paths, providing unified capacitance support while maintaining the ability to handle different signal conditions through proper capacitance value selection.

Inventive Principle:
Principle #5Merging (Combining)

3Productivity

If traditional RF amplifier design is used, then the structure is simple, but it cannot efficiently handle high Peak-to-Average Ratio modulated signals

Engineering Contradiction:
Improvepower handling efficiencyVSAvoidamplifier configuration
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The amplifier configuration dynamically adapts to high PAR modulated signals by using a shared capacitance that remains effective across varying power levels. The common capacitance stabilizes the current conducting terminals during peak power transitions, enabling efficient handling of modulated signals with high Peak-to-Average Ratios while maintaining a relatively simple overall structure.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS11050395B2Radio frequency (RF) amplifier
Publication Date: 2021.06.29 NXP USA INC
  • US11050395B2 patent drawing
  • US11050395B2 patent drawing
  • US11050395B2 patent drawing

AI summary

Embodiments of a device and method are disclosed. In an embodiment, an RF amplifier includes first and second RF signal paths having RF input interfaces, RF output interfaces, and corresponding transistors connected between the respective RF input interfaces and RF output interfaces, wherein control terminals of the transistors are connected to the RF input interfaces and current conducting terminals of the transistors are connected to the corresponding RF output interfaces. The RF amplifier including a conductive path between the current conducting terminal of the first transistor and the current conducting terminal of the second transistor, wherein the conductive path includes a first inductance, a second inductance, and a capacitance electrically connected between the first inductance and the second inductance.