RF Amplifier Gate Bias Modulation Using Shaped Envelope Signals

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Solution Overview

Problem

Existing RF power amplifiers face challenges in achieving high efficiency, high fractional bandwidth, and high linearity simultaneously, as many designs with high theoretical power efficiencies often have lower fractional bandwidths and reduced linearity.

Innovation Solution

The use of gate bias modulation with a shaped envelope signal, applied to the transistors of RF amplifiers, facilitated by attenuators and phase shifters that can be digitally controlled, to enhance amplifier performance by optimizing transistor operation for both efficiency and linearity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If high theoretical power efficiency amplifier designs are used, then power efficiency is improved, but fractional bandwidth and linearity deteriorate

Engineering Contradiction:
Improvepower efficiencyVSAvoidfractional bandwidth
Core Design Contradiction:
Loss of energyVSAdaptability or versatility

Solution Approach 1:

The patent applies dynamics by making the amplifier's operating class可调 (adjustable) through envelope signal shaping. The amplifier can dynamically transition between different operating classes (e.g., Class C to Class A) based on the instantaneous envelope signal characteristics, enabling high efficiency during peak power operation while maintaining linearity during low power operation, thus resolving the bandwidth-efficiency tradeoff

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the bias parameter dynamically through envelope signal shaping. By shaping the envelope signal to provide appropriate gate bias modulation, the amplifier's operating point is continuously adjusted to optimize both efficiency and linearity across different signal conditions and frequency ranges, thereby improving fractional bandwidth without sacrificing efficiency

Inventive Principle:
Principle #35Parameter changes

2Loss of energy

If high theoretical power efficiency amplifier designs are used, then power efficiency is improved, but linearity deteriorates

Engineering Contradiction:
Improvepower efficiencyVSAvoidlinearity
Core Design Contradiction:
Loss of energyVSManufacturing precision

Solution Approach 1:

The amplifier dynamically adjusts its operating class based on the envelope signal amplitude. During low power operation, it operates in a more linear mode (Class A/AB), while during peak power operation, it transitions to a more efficient but less linear mode (Class C), with the envelope shaping compensating for the non-linearity, thus achieving both high efficiency and high linearity simultaneously

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The envelope signal shaping mechanism provides a form of feedback control where the instantaneous envelope of the input signal is detected and used to modulate the gate bias. This feedback loop continuously optimizes the amplifier's operating point to maintain linearity while maximizing efficiency, resolving the contradiction between these two parameters

Inventive Principle:
Principle #23Feedback

3Loss of energy

If gate bias modulation with shaped envelope signal is applied, then power efficiency and linearity are improved, but device complexity increases

Engineering Contradiction:
Improvepower efficiencyVSAvoiddevice complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The envelope signal generator and shaping circuitry serves multiple functions: it generates the envelope signal, shapes it to provide gate bias modulation, and simultaneously controls the amplifier's operating class. This multi-functionality reduces the need for separate control circuits, thereby minimizing the increase in device complexity while achieving improved efficiency and linearity

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentEP3334037B1Amplifier devices with envelope signal shaping for gate bias modulation
Publication Date: 2020.07.29 NXP USA INC
  • EP3334037B1 patent drawingFigure 1
  • EP3334037B1 patent drawingFigure 2
  • EP3334037B1 patent drawingFigure 3

AI summary

The embodiments described herein include amplifiers configured for use in radio frequency (RF) applications. In accordance with these embodiments, the amplifiers are implemented to generate a shaped envelope signal, and to apply the shaped envelope signal to transistor gate(s) of the amplifier to provide gate bias modulation. So configured, the shaped envelope signal may facilitate high linearity in the amplifier.