RF Power Amplifier Submount Shielding at Wiring Crossovers
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Solution Overview
Problem
Existing radio-frequency power amplifier devices face challenges in preventing interference between bias power supply wiring and radio-frequency signal wiring, particularly at intersection points on submount substrates, which affects the performance and efficiency of the amplifier.
Innovation Solution
A radio-frequency power amplifier device is designed with a hybrid type configuration, utilizing a multilayer submount substrate with resin and wiring layers. This design includes a shield pattern set to ground potential at the intersection region between radio-frequency signal wiring and bias power supply wiring, along with connection vias connected to the shield pattern to reduce interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If bias power supply wiring and radio-frequency signal wiring are provided in different layers of the submount substrate with an intersection portion, then the device complexity is reduced and ease of manufacture is improved, but interference between the wiring occurs affecting reliability
Solution Approach 1:
A shield wiring layer is introduced as an intermediary between the bias power supply wiring (third wiring layer) and radio-frequency signal wiring (first wiring layer). The shield wiring (second wiring layer) acts as a mediator that blocks electromagnetic interference while maintaining the multi-layer wiring structure. Connection vias connect the shield wiring to ground potential to effectively dissipate interference signals.
2Reliability
If a shield pattern and connection vias are added at the intersection region, then interference is reduced improving reliability, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The shield pattern is not implemented across the entire submount substrate but only at the specific intersection region where the bias power supply wiring and radio-frequency signal wiring cross. This localized approach provides interference protection exactly where needed while minimizing the additional manufacturing complexity and cost.
3Productivity
If the bias power supply semiconductor device and power amplifier are mounted on the same submount substrate, then the device integration is improved and productivity increases, but interference between bias power supply wiring and radio-frequency signal wiring occurs
Solution Approach 1:
The interference problem is solved by transitioning from a two-dimensional planar separation approach to a three-dimensional multi-layer stacking approach. The shield wiring is placed in a intermediate layer between the bias power supply wiring (third layer) and radio-frequency signal wiring (first layer), creating vertical separation that effectively blocks electromagnetic interference while maintaining compact integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces interference between bias power supply wiring and radio-frequency signal wiring, enhancing the operational stability and efficiency of the radio-frequency power amplifier device, particularly in high-power and high-efficiency applications.
Implementation Method 1
a shield pattern disposed in a region including the intersection portion that is included in a second wiring layer located between the first wiring layer and the third wiring layer, the shield pattern being set to a ground electric potential
Data Source
AI summary
A radio-frequency power amplifier device includes: a carrier amplifier semiconductor device and a peak amplifier semiconductor device on a multilayer submount substrate; a bias power supply semiconductor device; second radio-frequency signal wiring that transmits radio-frequency signal to the carrier amplifier semiconductor device and the peak amplifier semiconductor device; and carrier-amplifier bias power supply wiring that is wired in a third wiring layer and supplies a bias power supply voltage. The second radio-frequency signal wiring and the carrier-amplifier bias power supply wiring intersect in a plan view. The radio-frequency power amplifier device includes: a shield pattern that is located in a second wiring layer between a first wiring layer and the third wiring layer; and one or more connection vias disposed in an extension direction of the carrier-amplifier bias power supply wiring. The one or more connection vias are connected to the shield pattern.