RF-Based Thermometry for Semiconductor Defect Localization
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Solution Overview
Problem
Current failure analysis techniques for heterogeneous computing devices are inadequate for non-destructive isolation of defects in complex semiconductor packaging architectures, particularly failing to detect internal low resistance short failures, high resistance, or open-circuit failures, and lack precision in defect localization, especially in vertically stacked dies.
Innovation Solution
A fully integrated system utilizing synchronized RF-based thermometry that applies amplified and synchronized high-frequency RF signals to generate thermal signatures at defect locations, enabling precise defect isolation with high-resolution thermal imaging and dielectric relaxation analysis, allowing for non-destructive identification of defects in 3D packages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional failure isolation techniques are used, then simple electrical open-circuit failures can be detected, but defects in complex heterogeneous packaging architectures cannot be precisely localized
Solution Approach 1:
The patent replaces conventional electrical measurement systems with RF-based thermometry. By applying RF signals and measuring thermal responses, the system achieves precise defect localization in complex 3D heterogeneous packages without being constrained by electrical routing complexity. The thermal field provides direct spatial information about defect locations.
Solution Approach 2:
The patent changes the measurement parameter from electrical properties to thermal properties. By monitoring temperature changes induced by RF signals at defect locations, the system can precisely locate defects regardless of the complex packaging architecture. This parameter transformation enables measurement precision independent of routing complexity.
2Reliability
If destructive failure analysis approaches are used, then some defects can be identified, but reliability of defect location and production capability are reduced
Solution Approach 1:
The patent employs a non-destructive RF-based thermometry system that allows defects to be detected and characterized without damaging the device. The RF signals and thermal measurements provide sufficient information for defect identification, eliminating the need for destructive analysis methods and preserving production capability.
Solution Approach 2:
The patent introduces thermal field as an intermediary between the RF signals and defect detection. This thermal mediator provides reliable defect identification through temperature mapping while maintaining device integrity, achieving both high reliability and preserved productivity.
3Measurement precision
If high-frequency RF signals are applied for thermometry, then spatial resolution for defect localization is improved, but signal dissipation in lengthy interconnects increases
Solution Approach 1:
The patent extracts the measurement function from the electrical interconnect system and implements it through thermal field measurement. By applying RF signals and detecting thermal responses rather than measuring electrical properties directly, the system achieves high spatial resolution without suffering from signal dissipation in lengthy interconnects.
Solution Approach 2:
The patent substitutes electrical measurement with thermal measurement. The thermal field generated by RF signals provides high spatial resolution for defect localization while avoiding the energy loss problems inherent in electrical signal transmission through complex interconnect structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise localization of defects with high spatial resolution, including depth characterization, and rapid defect isolation in complex semiconductor packages, overcoming limitations of existing techniques by providing non-destructive dynamic failure analysis for internal electrical failures.
Implementation Method 1
applying amplified and synchronized high-frequency RF signals to generate thermal signatures at defect locations
Implementation Method 2
generate thermal signatures at defect locations
Implementation Method 3
thermal imaging sensor... generating thermal images of the semiconductor package to detect a thermal signature from the defect
Data Source
AI summary
According to the various examples, a fully integrated system and method for failure analysis using RF-based thermometry enable the detection and location of defects and failures in complex semiconductor packaging architectures. The system provides synchronous amplified RF signals to generate unique thermal signatures at defect locations based on dielectric relaxation loss and heating.