RF Component Fabrication with Laser-Annealed Trap-Rich Substrates

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Solution Overview

Problem

Existing radio frequency components face challenges with parasitic surface conduction, which degrades their performance due to induced currents in the semiconductor substrate.

Innovation Solution

A method involving laser anneal of a semiconductor substrate to create a trap-rich layer, followed by forming an insulating layer and radio frequency components on it, to reduce parasitic currents.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional semiconductor substrate is used for RF components, then the manufacturing process is simple, but parasitic surface conduction degrades component performance

Engineering Contradiction:
ImproveRF component performanceVSAvoidparasitic surface conduction
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent applies preliminary action by performing laser annealing on the semiconductor substrate before fabricating the RF components. This pre-treatment creates a trap-rich layer that captures charge carriers and prevents parasitic surface conduction during subsequent component operation, thereby improving RF component performance without complicating the overall manufacturing process

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent converts the harmful effect of parasitic surface conduction into a beneficial outcome by using laser annealing to deliberately create controlled defects and traps in the substrate surface. These traps, which could be considered defects, actually serve to capture charge carriers and reduce unwanted conduction, thus transforming a potential harm into a performance-enhancing feature

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

2Object-generated harmful factors

If laser anneal is applied to create trap-rich layer, then parasitic currents are reduced, but manufacturing process complexity increases

Engineering Contradiction:
Improveparasitic currentsVSAvoidmanufacturing process
Core Design Contradiction:
Object-generated harmful factorsVSDevice complexity

Solution Approach 1:

The patent replaces complex multi-step chemical or physical treatment processes with a single laser annealing step. The laser process directly creates the desired trap-rich layer through controlled thermal processing, eliminating the need for multiple sequential manufacturing steps and thereby reducing overall process complexity despite the advanced technology involved

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively decreases parasitic currents and improves the performance of radio frequency components by creating a high trap density surface layer using a simple and cost-effective laser anneal technique.

Implementation Method 1

a) a laser anneal of a first thickness of the substrate on the upper surface side of the substrate

Methodology Applied
Scientific EffectLaser heating: Laser

Implementation Method 2

during step a), the first thickness of the substrate is melted

Methodology Applied
Scientific EffectMelting: Melting

Data Source

PatentUS20250191935A1Manufacturing method of RF components
Publication Date: 2025.06.12 STMICROELECTRONICS (TOURS) SAS
  • US20250191935A1 patent drawing
  • US20250191935A1 patent drawing

AI summary

The present description concerns a method of manufacturing a device comprising at least one radio frequency component on a semiconductor substrate comprising: a) a laser anneal of a first thickness of the substrate on the upper surface side of the substrate; b) the forming of an insulating layer on the upper surface of the substrate; and c) the forming of said at least one radio frequency component on the insulating layer.