RF Coupler With Through-Substrate Vias For Signal Attenuation
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Solution Overview
Problem
In ultra high frequency and radio frequency (RF) circuitry, there is a need to generate attenuated RF signals in secondary couplings from a common RF signal, which existing RF couplers fail to achieve effectively, particularly in controlling signal power transfer and directionality.
Innovation Solution
A semiconductor device with a radio frequency coupler comprising a first and second coupling element, each with through-substrate vias passing through a semiconductor substrate, allowing for electromagnetic coupling and controlled signal attenuation, with the second coupling element providing an attenuated RF signal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional RF coupler structures are used, then the device structure is simple, but the ability to generate attenuated RF signals with desired frequency selectivity and directionality is insufficient
Solution Approach 1:
The RF coupler is segmented into multiple coupling elements (first coupling element, second coupling element, third coupling element) with distinct functions. Each element is equipped with through-substrate vias that can be independently configured, allowing separate control of signal paths and attenuation levels, thereby achieving reliable signal power transfer control through modular functional division
Solution Approach 2:
The patent introduces through-substrate vias that extend vertically through the substrate, adding a third dimension (depth/vertical dimension) to the traditional planar coupler structure. This dimensional transition enables electromagnetic coupling between different substrate layers, providing enhanced control over signal directionality and frequency selectivity without significantly increasing planar footprint
2Manufacturing precision
If RF coupler is designed for frequency selectivity, then signal attenuation control improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent utilizes through-substrate vias with configurable parameters (position, dimensions, conductive material composition) to achieve frequency selectivity. By adjusting via parameters such as diameter, spacing, and depth, the coupler can be tuned to specific frequency ranges, allowing manufacturing precision to be optimized for the target frequency application rather than requiring ultra-precise manufacturing across all frequencies
Solution Approach 2:
The through-substrate vias act as intermediary elements that mediate the electromagnetic coupling between coupling elements. These vias provide a controlled interface for signal transfer, where their physical and electrical properties can be precisely engineered to achieve the desired frequency response, thereby reducing the overall manufacturing precision requirements for the entire coupler structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables efficient generation of attenuated RF signals with desired characteristics, such as frequency selectivity, by using through-substrate vias in RF couplers, effectively addressing the challenge of signal power transfer and directionality in RF circuitry.
Implementation Method 1
a first coupling element and a second coupling element spacedly disposed from the first coupling element, the first coupling element including at least one through-substrate via disposed in the substrate, the second coupling element including at least one through-substrate via disposed in the substrate
Data Source
AI summary
One or more embodiments relate to a semiconductor device, comprising: a substrate; and a radio frequency coupler including a first coupling element and a second coupling element spacedly disposed from the first coupling element, the first coupling element including at least one through-substrate via disposed in the substrate, the second coupling element including at least one through-substrate via disposed in the substrate.