Two-Stage RF Detector Circuit for Linear Power Detection

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing detector circuits exhibit non-linear response to radio frequency input power, leading to inefficiencies in power amplification and signal detection due to exponential changes in detection voltage, which affects the linearity and impedance characteristics of the circuit.

Innovation Solution

Incorporating a first and second transistor with an alternating current signal path that supplies the input signal to the base of the second transistor, along with specific resistor and capacitor configurations to adjust bias and AC ground the transistors, thereby improving linearity and suppressing exponential changes in detection voltage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a conventional detector circuit with two transistors is used, then the detection voltage changes exponentially with respect to RF input power, but this results in poor linearity of the detector circuit

Engineering Contradiction:
Improvelinearity of detectionVSAvoidexponential response stability
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The detector circuit is divided into two separate transistor stages (first transistor Tr1 and second transistor Tr2) with distinct functions. The first transistor converts RF input power to an intermediate voltage signal, while the second transistor converts this intermediate signal to the final detection voltage. This segmentation allows each transistor to operate in a more linear region, improving overall detection linearity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

An intermediate voltage signal is introduced between the two transistor stages. The first transistor's output (collector voltage) serves as an intermediate signal that is then fed to the second transistor's base. This intermediary approach breaks the direct exponential relationship between RF input power and detection voltage, enabling linearization through the two-stage conversion process.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of operation

If the detection voltage changes exponentially with RF input power, then the transistor current response is natural, but this causes poor linearity in the detector output

Engineering Contradiction:
Improvetransistor current responseVSAvoiddetection voltage linearity
Core Design Contradiction:
Ease of operationVSMeasurement precision

Solution Approach 1:

The circuit dynamically processes the signal through two sequential transistor stages, where each stage transforms the signal in a controlled manner. The first transistor dynamically converts RF power to intermediate voltage, and the second transistor dynamically converts this to linear detection voltage, maintaining natural transistor operation while achieving linearity.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The invention changes the operational parameters of the transistors by configuring them in two separate stages with different biasing and loading conditions. The first transistor operates with RF input at its base, while the second transistor operates with the intermediate voltage at its base, changing the parameter relationships to achieve linear output despite exponential current-voltage characteristics.

Inventive Principle:
Principle #35Parameter changes

3Device complexity

If a simple two-transistor detector circuit is used, then the circuit structure is simple, but this results in non-linear detection characteristics

Engineering Contradiction:
Improvecircuit structureVSAvoiddetection linearity
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The simple two-transistor structure is segmented into functionally distinct stages: Tr1 for RF-to-intermediate conversion and Tr2 for intermediate-to-detection conversion. This segmentation maintains circuit simplicity while improving linearity, as each transistor handles a specific conversion task rather than both conversions in a single stage.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The detection process is extended into another dimension by adding a second transistor stage. Instead of a single-stage direct conversion, the invention uses a two-dimensional sequential conversion process through Tr1 and Tr2, adding temporal and functional dimensionality to achieve linearity without significantly increasing complexity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enhances the linearity of the detector circuit, maintaining detection voltage within a stable range and suppressing changes in input impedance, thereby improving the overall performance and characteristics of the power amplification module.

Implementation Method 1

the current that flows through a transistor changes in the form of an exponential function with respect to the voltage supplied to the base thereof

Methodology Applied
Scientific EffectExponential current-voltage relationship:

Data Source

PatentUS10931236B2Detector circuit
Publication Date: 2021.02.23 MURATA MFG CO LTD
  • US10931236B2 patent drawing
  • US10931236B2 patent drawing
  • US10931236B2 patent drawing

AI summary

Provided is a detector circuit that includes: a first transistor that has an alternating current signal input to a base thereof, and that outputs a first detection signal that depends on the alternating current signal from a collector thereof; a second transistor that has the first detection signal input to a base thereof, and that outputs a second detection signal that depends on the first detection signal from a collector thereof; and an alternating current signal path along which the alternating current signal is supplied to the base of the second transistor.