Partitioned RF Electrode Structure for Stable Plasma Deposition
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Solution Overview
Problem
Existing plasma processing apparatuses face challenges in maintaining stable plasma discharge when conductive films are deposited on internal surfaces, leading to insufficient RF power supply and difficulty in generating plasma, especially in batch-type processing systems.
Innovation Solution
The apparatus incorporates an internal electrode that passes through a partition wall and is airtightly inserted into the internal space, with a first gap between the partition wall and the electrode, allowing for RF power supply and preventing electrical connection even when conductive films form, thus maintaining plasma discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the internal electrode is inserted into the internal space without a gap, then electrical connection is established, but plasma discharge efficiency deteriorates due to short-circuiting and RF power attenuation
Solution Approach 1:
The internal electrode is segmented into multiple sections along its length, with insulating portions positioned at specific locations. This segmentation prevents continuous electrical connection between the electrode and partition wall, eliminating short-circuiting while maintaining RF power transmission efficiency for plasma generation.
Solution Approach 2:
An insulating coating or insulating portion is introduced as an intermediary between the conductive internal electrode and the partition wall. This intermediary prevents direct electrical contact and short-circuiting, while allowing the electrode to maintain its RF power supply function for efficient plasma discharge.
2Productivity
If conductive film is deposited on the partition wall, then film formation is achieved, but RF power for plasma generation is attenuated
Solution Approach 1:
The harmful effect of conductive film deposition on RF power transmission is extracted and isolated by positioning insulating portions of the internal electrode at strategic locations. These insulating portions prevent the deposited conductive film from creating electrical short-circuits, thereby maintaining RF power efficiency even when film formation occurs on the partition wall.
3Stability of the object's composition
If the internal electrode is directly connected to the partition wall, then structural stability is improved, but film deposition quality deteriorates due to electrical discharge
Solution Approach 1:
The internal electrode structure transitions from uniform conductivity to non-uniform electrical properties, with insulating portions positioned at specific locations where contact with the partition wall occurs. This local modification of electrical properties prevents short-circuiting and electrical discharge during film deposition, ensuring high film quality while maintaining overall structural stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables stable plasma generation and efficient film formation on multiple substrates, reducing film formation time and temperature, and achieving lower resistivity films compared to traditional methods.
Implementation Method 1
an internal electrode that passes through the partition wall, is airtightly inserted into the internal space, and supplied with RF power
Data Source
AI summary
A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and defines an internal space communicating with an inside of the processing container, and an internal electrode that passes through the partition wall, is airtightly inserted into the internal space, and is supplied with RF power. A first gap is provided between the partition wall and the internal electrode.