Centrally Fed RF Feed Structure for Uniform PVD Deposition
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Solution Overview
Problem
Conventional RF physical vapor deposition chambers with coupled RF and DC energy exhibit non-uniform deposition profiles on substrates due to inadequate energy distribution.
Innovation Solution
An improved RF feed structure and PVD chamber design that includes a body with a central opening to distribute RF energy uniformly to the target, utilizing a source distribution plate and terminals to ensure even energy coupling, enhancing the uniformity of electromagnetic fields and deposition profiles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional RF and DC energy feeds are coupled to the sputtering target, then the target can be powered for deposition, but the deposition profile on substrates becomes non-uniform
Solution Approach 1:
The feed structure is segmented into distinct functional components: a body portion with a central opening, a source distribution plate with multiple openings, and peripheral edge coupling mechanisms. This segmentation allows RF energy to be distributed through multiple pathways (central and peripheral) to achieve uniform deposition profiles while maintaining manageable structural complexity through modular design
Solution Approach 2:
The feed structure implements local quality by providing different energy coupling regions: the source distribution plate distributes RF energy across the central region of the target, while the peripheral edge coupling provides targeted energy at the target's periphery. This localized energy distribution compensates for natural edge effects and achieves uniform deposition across the entire substrate surface
2Manufacturing precision
If RF energy is distributed to the target, then deposition occurs on substrates, but the energy distribution is non-uniform leading to poor deposition uniformity
Solution Approach 1:
The feed structure changes the spatial distribution parameters of RF energy delivery by introducing both central (through the source distribution plate) and peripheral (through edge coupling) energy pathways. This dual-pathway approach modifies the energy distribution pattern to compensate for natural plasma density gradients, achieving uniform deposition even at high pressures where such gradients are more pronounced
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves more uniform distribution of target material on substrates, improving the uniformity of deposition profiles even at high pressures, and is beneficial for both high and low pressure RF PVD applications.
Implementation Method 1
a feed structure to couple RF energy to a target in a physical vapor deposition chamber may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target
Implementation Method 2
Methods and apparatus for physical vapor deposition are provided
Data Source
AI summary
In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.