RF Generator Arbitrary Waveform Pulsing Control
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Solution Overview
Problem
Conventional RF generators in plasma semiconductor manufacturing processes have limited waveform options for pulsed RF signals, restricting the control over etch and deposition profiles, and require external signal generators for pulsing techniques.
Innovation Solution
An RF generator system that allows for the generation of pulsed RF signals with arbitrary, multi-step, or single-step pulses of any shape by using a modulating signal with a user-defined waveform, enabling precise control over pulse characteristics and power levels through a digital or analog feedback loop, and eliminating the need for external signal generators.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If an external pulsed signal generator is used to create pulsed RF signals, then waveform flexibility is improved, but device complexity and cost increase
Solution Approach 1:
The patent combines the RF signal generation and pulsing functions into a single RF generator device. The RF generator internally generates both the RF carrier signal and the modulating pulsed signal, then combines them through a mixer to produce pulsed RF output. This eliminates the need for separate external signal generators and reduces system complexity while maintaining waveform flexibility.
Solution Approach 2:
The RF generator is designed to perform multiple functions: it generates the RF carrier signal, creates various types of pulsed waveforms (single-step, multi-step, arbitrary), and outputs the combined pulsed RF signal. This multi-functional capability replaces what previously required multiple separate devices, reducing overall system complexity while providing comprehensive waveform control.
2Device complexity
If standard on/off single step RF pulsing is used, then device complexity is reduced, but manufacturing precision deteriorates
Solution Approach 1:
The patent implements dynamic pulsing control where the modulating signal can vary its amplitude across multiple steps within each pulse cycle. This allows the RF power to be dynamically adjusted during the pulse duration, enabling precise control over plasma processes such as etch and deposition profiles. The system transitions from static on/off control to dynamic multi-level control, improving manufacturing precision while maintaining manageable device complexity.
Solution Approach 2:
The system allows changing multiple parameters of the pulsed RF signal including pulse width, duty cycle, amplitude levels, and waveform shape. By providing control over these parameters, the system achieves precise control over plasma process outcomes without requiring complex external equipment. The ability to adjust parameters like peak power at each pulse step enables fine-tuned control of etch and deposition profiles.
3Adaptability or versatility
If arbitrary waveform pulsing is implemented, then adaptability is improved, but loss of information increases due to limited waveform options in external generators
Solution Approach 1:
The patent incorporates a feedback loop that monitors the actual RF output power and adjusts the modulating signal accordingly. This feedback mechanism ensures that the desired arbitrary waveforms are accurately reproduced at the output, preventing information loss. The system can precisely control and verify the waveform characteristics, maintaining complete information about the intended pulse shape and timing.
Data Source
AI summary
Radio frequency (RF) generators are disclosed. A RF generator may include a modulator configured to receive an arbitrary waveform and an RF carrier, and generate a pulsed radio frequency (RF). The arbitrary waveform may be generated via an analog signal generator external to the RF generator. Further, the RF generator may include an amplification stage configured to amplify the pulsed RF signal. RF generation systems and methods of generating a pulsed RF signal also disclosed.