Semiconductor Contact Structure With RF-Heated Graphene Growth
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Solution Overview
Problem
The challenge of forming reliable semiconductor devices at smaller sizes is exacerbated by the complexity of processing and manufacturing due to decreasing feature sizes, particularly in forming graphene layers on metal lines/vias using chemical vapor deposition methods, which require lengthy deposition times due to slow heating rates.
Innovation Solution
A method utilizing a deposition system with an RF source to heat a magnetic layer to a target temperature for graphene growth within seconds, enabling a shortened deposition time for the graphene layer, improving production efficiency and quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If chemical vapor deposition method is used to form graphene layer on metal lines/vias, then graphene layer can be formed, but deposition time becomes lengthy due to slow heating rates
Solution Approach 1:
The patent replaces conventional thermal field heating with electromagnetic induction heating using an RF source. The RF source generates an alternating magnetic field that induces eddy currents in the magnetic layer, converting electromagnetic energy directly into heat within the magnetic layer itself, thereby eliminating the slow conductive heating process and reducing deposition time to seconds.
Solution Approach 2:
The patent introduces a magnetic layer with specific magnetic properties (high permeability, low coercivity) between the RF source and the metal lines/vias. This magnetic layer concentrates and enhances the alternating magnetic field, increasing the heating efficiency and allowing rapid temperature rise to the graphene growth temperature range (700-1000°C) in seconds.
2Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency improves and costs lower, but processing and manufacturing complexity increases
Solution Approach 1:
The patent replaces the conventional slow thermal conduction heating mechanism with electromagnetic induction heating, enabling rapid temperature rise and shortening deposition time from minutes to seconds. This dramatically improves production efficiency and throughput while maintaining the ability to process small feature sizes.
Solution Approach 2:
The patent uses dynamic RF heating that can be rapidly turned on and off, allowing precise control of the heating process. The RF source can be activated only when needed for graphene deposition, reducing overall process time and enabling faster cycle times for high-volume production of scaled devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The RF source allows for rapid graphene layer formation on a magnetic layer, enhancing production efficiency and reducing sheet resistance, thereby addressing the challenges of lengthy deposition times in conventional methods.
Implementation Method 1
A method utilizing a deposition system with an RF source to heat a magnetic layer to a target temperature for graphene growth within seconds
Implementation Method 2
A method utilizing a deposition system with an RF source to heat a magnetic layer to a target temperature for graphene growth within seconds
Data Source
AI summary
A semiconductor structure includes a substrate, a gate structure, source/drain structures, a metal contact, a magnetic layer, and a first graphene. The gate structure is disposed over the substrate. The source/drain structures are disposed at opposite sides of the gate structure. The metal contact is disposed over one of the source/drain structures. The magnetic layer is over the metal contact. The first graphene layer is over the magnetic layer.