RF Impedance Matching in Semiconductor Process Chambers

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Solution Overview

Problem

Existing impedance-matching devices in semiconductor processing equipment suffer from low efficiency due to inconsistent impedance matching caused by inappropriate initial capacitance settings and wear of internal consumables, leading to energy waste and safety risks.

Innovation Solution

An impedance-matching method and equipment that adjusts parameter values of adjustable devices based on stored data and real-time feedback, updating these settings to ensure accurate impedance matching during processing ignition steps, thereby improving efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional semiconductor manufacturing process is used, then manufacturing simplicity is maintained, but signal integrity deteriorates due to impedance discontinuities at process module boundaries

Engineering Contradiction:
Improvesignal integrityVSAvoidprocess module complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent introduces an intermediary impedance matching module between process modules with different characteristic impedances. This intermediary component transforms the impedance levels to ensure continuous impedance matching across module boundaries, thereby maintaining signal integrity without requiring complete redesign of the entire transmission line system.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent modifies the characteristic impedance parameter of specific transmission line segments to match the impedance of adjacent process modules. By adjusting the impedance parameter (Z0) of the transmission line in the impedance matching module, the patent eliminates impedance discontinuities and reduces signal reflections at module interfaces.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If impedance matching modules are added to improve signal integrity, then signal quality improves, but manufacturing complexity increases

Engineering Contradiction:
Improvesignal qualityVSAvoidmanufacturing ease
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent divides the transmission line system into discrete functional segments: process modules and impedance matching modules. Each segment is designed and manufactured independently with specific impedance characteristics, allowing for modular fabrication and assembly. This segmentation enables standardization of manufacturing processes while maintaining overall system impedance continuity.

Inventive Principle:
Principle #1Segmentation

3Productivity

If signal frequency is increased to improve data transmission speed, then productivity improves, but signal integrity deteriorates due to increased sensitivity to impedance discontinuities

Engineering Contradiction:
Improvedata transmission speedVSAvoidsignal integrity
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent incorporates impedance matching design that provides feedback control for signal integrity. By designing the transmission line system with controlled impedance characteristics and matching networks, the system automatically compensates for signal reflections and distortions that become more pronounced at higher frequencies, thereby maintaining signal integrity across a wide frequency range.

Inventive Principle:
Principle #23Feedback

Data Source

PatentEP4411784B1Semiconductor process device and impedance matching method therefor
Publication Date: 2026.05.06 BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
  • EP4411784B1 patent drawingFigure 1
  • EP4411784B1 patent drawingFigure 2
  • EP4411784B1 patent drawingFigure 3~4

AI summary

Embodiments of the present disclosure provide semiconductor processing equipment and an impedance-matching method of the semiconductor processing equipment to solve the problem of low impedance-matching efficiency in the existing semiconductor processing process. The method includes a process preparation step of obtaining currently stored impedance-matching data corresponding to the process ignition step, the impedance-matching data including a parameter adjustment position corresponding to a parameter adjustable device in the impedance-matching device of the semiconductor process equipment, and adjusting the parameter value of the parameter adjustable device according to the parameter adjustment position, and a processing ignition step of applying RF power into a processing chamber of the semiconductor process equipment through the impedance-matching device, performing impedance matching through the impedance-matching device, determining the current parameter adjustment position of the parameter adjustable device when the impedance is matched, and updating the impedance-matching data according to the current parameter adjustment position. In the technical solution, the parameter value of the parameter-adjustable device can be accurately and automatically adjusted according to the parameter adjustment position in the impedance-matching data, which shortens the impedance-matching time and improves the impedance-matching efficiency.