RF Energy Spreading Electrode Assembly for Smooth Ion Implant Profiles

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Solution Overview

Problem

Current ion implantation methods for semiconductor devices face challenges in generating smooth dopant profiles with targeted shapes due to the use of multiple ion implants, which can lead to contamination and particle risks, especially in high-energy applications.

Innovation Solution

An ion implanter system that includes an ion source, DC and AC linear accelerators, and an energy spreading electrode assembly to generate a continuous ion beam with a controlled energy spread using RF voltage between electrodes, allowing for a broader implant profile without the need for multiple implants.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If multiple ion implants are used to generate smooth dopant profiles, then the targeted dopant profile shape is achieved, but contamination and particle risks increase

Engineering Contradiction:

Improvedopant profile shapeVSAvoidcontamination and particle risks

Core Design Contradiction:

Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent applies parameter changes by using a single ion implantation step with a broad energy spread (e.g., 10-20% or wider) instead of multiple narrow-energy implants. The energy spread is controlled through RF voltage applied to the energy spreading electrode assembly, which modulates the ion beam energy dynamically. This single-step approach with controlled energy distribution achieves the desired dopant profile while eliminating the contamination risks associated with multiple implant cycles.

Inventive Principle:

Principle #35Parameter changes

2Manufacturing precision

If multiple ion implants at different energies are used, then smooth dopant profiles are generated, but process complexity and time increase

Engineering Contradiction:

Improvedopant profile smoothnessVSAvoidimplantation process efficiency

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

The patent merges multiple ion implantation operations into a single implantation step by using an energy spread ion beam. The RF voltage applied to the energy spreading electrode assembly creates a distribution of ion energies within the beam, effectively combining what would have been multiple discrete energy implants into one continuous process. This reduces cycle time and increases productivity while maintaining the ability to generate smooth dopant profiles.

Inventive Principle:

Principle #5Merging (Combining)

3Quantity of substance

If a sawtooth absorbing filter is used to generate energy spread, then a broader implant profile is achieved, but contamination and filter life issues arise

Engineering Contradiction:

Improveion beam energy spreadVSAvoidcontamination and particle generation

Core Design Contradiction:

Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

The patent replaces the mechanical sawtooth absorbing filter system with an electromagnetic field-based energy spreading mechanism. Instead of using physical filters that require contact and are prone to contamination, the invention uses RF voltage applied to electrode assemblies to create an oscillating electric field that modulates ion beam energy. This substitution eliminates the contamination and particle generation issues associated with mechanical filters while achieving the desired energy spread.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

4Quantity of substance

If sawtooth absorbing filters are used for energy spread, then broader implant profile is obtained, but operational reliability decreases

Engineering Contradiction:

Improveenergy spread distributionVSAvoidfilter life and operational stability

Core Design Contradiction:

Quantity of substanceVSReliability

Solution Approach 1:

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The system achieves a broader implant profile with adjustable energy spread, enhancing the efficiency and reliability of ion implantation processes in semiconductor devices.

Implementation Method 1

a DC acceleration system, to accelerate the continuous ion beam

Methodology Applied

Scientific EffectElectrostatic acceleration: Electrostatics

Implementation Method 2

an AC linear accelerator to receive the continuous ion beam and to output a bunched ion beam

Methodology Applied

Scientific EffectElectromagnetic acceleration: Electromagnetic Induction

Implementation Method 3

an energy spreading electrode assembly, to receive the bunched ion beam and to apply an RF voltage between a plurality of electrodes of the energy spreading electrode assembly, along a local direction of propagation of the bunched ion beam

Methodology Applied

Scientific EffectRF voltage energy spreading: Electromagnetic Induction

Data Source

PatentUS12592359B2Apparatus, system and method for energy spread ion beam

Publication Date: 2026.03.31 APPLIED MATERIALS INC

AI summary

An ion implanter may include an ion source, arranged to generate a continuous ion beam, a DC acceleration system, to accelerate the continuous ion beam, as well as an AC linear accelerator to receive the continuous ion beam and to output a bunched ion beam. The ion implanter may also include an energy spreading electrode assembly, to receive the bunched ion beam and to apply an RF voltage between a plurality of electrodes of the energy spreading electrode assembly, along a local direction of propagation of the bunched ion beam.