RF Package Metal Mesh Layout for Low IR-Drop Power Routing
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Solution Overview
Problem
In RF circuit devices, the complexity of circuit design and routing leads to reduced availability of Ultra Thick Metal (UTM), constraining power/ground routing and affecting current distribution, power integrity, and IR-drop.
Innovation Solution
The implementation of aluminum or copper mesh layers stacked on UTM layers, which are connected to power sources or ground, improves electrical conductivity and reduces parasitic resistance by forming mesh structures with specific line and hole arrangements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If UTM is used as the power path for well current distribution and power integrity, then power performance is improved, but routing availability is reduced when circuit design becomes complicated
Solution Approach 1:
The UTM layer is segmented into multiple sub-layers (first UTM sub-layer and second UTM sub-layer) with different thicknesses and functions. The first sub-layer provides power/ground routing with sufficient thickness for power integrity, while the second sub-layer provides additional routing availability for complicated circuit designs. This segmentation allows both power performance and routing flexibility to be achieved simultaneously.
2Loss of energy
If UTM thickness is increased to reduce IR-drop and improve current distribution, then power efficiency is improved, but routing flexibility is constrained
Solution Approach 1:
The thick UTM structure is divided into multiple sub-layers with different thicknesses. The first sub-layer has greater thickness optimized for reducing IR-drop and improving current distribution, while the second sub-layer has reduced thickness to provide routing flexibility for complicated circuits. This resolves the contradiction between minimizing energy loss and maintaining routing adaptability.
Solution Approach 2:
The solution transitions from a single-plane thick metal layer to a multi-layer stacked structure in the vertical dimension. By utilizing the Z-axis (layer stacking), the patent achieves both thick metal properties for power integrity and routing flexibility through the combination of multiple layers with different characteristics.
3Ease of manufacture
If single thick metal layer is used for power path, then manufacturing is simplified, but routing availability for complicated circuits is reduced
Solution Approach 1:
The single thick metal layer is segmented into multiple UTM sub-layers that can be manufactured using standard multi-layer metal deposition processes. Each sub-layer can be formed, patterned, and connected using conventional semiconductor manufacturing techniques, maintaining ease of manufacture while providing enhanced routing availability through the multi-layer structure.
Data Source
AI summary
A semiconductor device and a semiconductor package structure are provided. The semiconductor device includes a Radio Frequency (RF) circuit, at least one Ultra Thick Metal (UTM) layer and at least one aluminum (AP) mesh layer. The UTM layer is stacked on the RF circuit. The aluminum mesh layer is stacked on the UTM layer, and the UTM layer is connected to a power source or a ground through the aluminum mesh layer.