High-Frequency Module Layout to Shield Control ICs From RF Noise
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Solution Overview
Problem
In high-frequency modules for mobile communication apparatuses, the stacking of surface acoustic wave devices and semiconductor integrated circuits leads to deterioration of control characteristics due to high-frequency noise oscillation, compromising the performance of semiconductor control ICs.
Innovation Solution
A high-frequency module configuration where the semiconductor control IC is stacked with a duplexer having a pass band with a relatively low frequency, rather than one with a higher frequency, to minimize the impact of high-frequency noise and maintain control characteristics while reducing module size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the semiconductor control IC is stacked with the high-frequency filter, then the module size is reduced, but the control characteristics of the semiconductor control IC deteriorate due to high-frequency noise
Solution Approach 1:
The high-frequency filter is segmented into multiple resonance circuits with different resonance frequencies. By distributing the filtering function across multiple circuits operating at different frequencies, the module achieves size reduction while minimizing noise interference to the control IC, as each resonance circuit generates less concentrated high-frequency noise compared to a single high-frequency filter
Solution Approach 2:
The patent applies local quality by arranging resonance circuits with different resonance frequencies at different locations and orientations around the control IC. Specifically, resonance circuits are placed with their crystal oscillation directions oriented differently (some parallel to control IC sides, some perpendicular), creating localized noise patterns that cancel each other out, thereby protecting the control IC while maintaining compact module size
2Adaptability or versatility
If multiple high-frequency filters are stacked with the semiconductor control IC, then the multi-band filtering capability is improved, but the high-frequency noise oscillation increases and worsens the control characteristics
Solution Approach 1:
The patent changes the resonance frequency parameter of multiple resonance circuits to different values. By setting each resonance circuit to operate at a distinct resonance frequency, the system achieves multi-band filtering capability while the distributed frequency spectrum reduces peak noise levels, preventing severe interference to the control IC
Solution Approach 2:
The resonance circuits are arranged asymmetrically around the control IC with different orientations and positions. This asymmetric layout ensures that high-frequency noise from different circuits does not constructively interfere at the control IC location, thereby reducing overall noise impact while maintaining multi-band filtering functionality
Data Source
AI summary
A high-frequency module (1) includes a mounting substrate (90), a duplexer (60L) arranged on the mounting substrate (90), a duplexer (60H) arranged on the mounting substrate (90) and having a pass band with a higher frequency than a pass band of the duplexer (60L), and a semiconductor control IC (40) arranged on the mounting substrate (90) and stacked with the duplexer (60L) of the duplexers (60L and 60H).