RF Module Layout for Heat-Isolated Filter Circuits
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Solution Overview
Problem
The degradation of filter circuit characteristics due to heat in radio-frequency modules, particularly in multiband communication devices, where the low thermal conductivity of gallium arsenide semiconductor ICs hinders effective heat dissipation and increases the temperature of the IC, affecting the duplexer's performance.
Innovation Solution
A radio-frequency module configuration that includes a first base made of a high thermal conductivity material like silicon or gallium nitride, a second base made of a lower thermal conductivity material like gallium arsenide or silicon-germanium for the amplifier circuit, and a third base made of piezoelectric material for the filter circuit, all arranged on a module substrate to facilitate heat dissipation and reduce module size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If a semiconductor IC made of gallium arsenide is laminated on a duplexer to reduce module size, then the module size is reduced, but the heat dissipation performance deteriorates and the temperature of the semiconductor IC increases
Solution Approach 1:
The invention divides the semiconductor IC into two separate components: a duplexer made of piezoelectric material and a semiconductor device made of gallium arsenide. These components are arranged separately on the substrate rather than laminating the semiconductor device directly on the duplexer. This segmentation allows independent thermal management and positioning to optimize both size and heat dissipation.
Solution Approach 2:
The invention transitions from a vertical lamination structure (semiconductor IC directly on duplexer) to a planar arrangement where both components are disposed on the same substrate in different regions. This dimensional change from stacking to side-by-side arrangement enables better thermal pathways while maintaining compact form factor.
2Volume of moving object
If a semiconductor IC made of gallium arsenide is laminated on a duplexer to reduce module size, then the module size is reduced, but the filter circuit characteristics are degraded due to heat
Solution Approach 1:
By segmenting the integrated circuit into separate duplexer and semiconductor device components arranged on the substrate, the invention isolates the heat-generating amplifier from the temperature-sensitive filter circuit. This prevents thermal degradation of the filter characteristics while maintaining compact module size.
Solution Approach 2:
The substrate acts as an intermediary that spatially separates the heat-generating semiconductor device from the temperature-sensitive duplexer. This intermediate positioning allows thermal management through the substrate structure, protecting the filter circuit from harmful heat while maintaining electrical connectivity.
3Volume of moving object
If components are arranged in a laminated structure to reduce module size, then the module size is reduced, but the heat dissipation path is limited
Solution Approach 1:
The invention changes from vertical heat dissipation through lamination to lateral heat dissipation pathways on the substrate plane. This allows heat to be conducted away from the semiconductor device through the substrate to edge regions or heat sinks, providing more efficient thermal management while maintaining compact three-dimensional integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses the degradation of filter circuit characteristics due to heat and achieves a reduction in module size by optimizing heat dissipation and component arrangement.
Implementation Method 1
a first base at least part of which is made of a first semiconductor material... a second base at least part of which is made of a second semiconductor material having a thermal conductivity lower than that of the first semiconductor material
Implementation Method 2
a third base at least part of which is made of a piezoelectric material and which includes a filter circuit
Data Source
AI summary
A radio-frequency module includes a first base made of a first semiconductor material; a second base that is made of a second semiconductor material having a thermal conductivity lower than that of the first semiconductor material and which includes a power amplifier circuit; a third base including a transmission filter circuit; and a module substrate having a main surface on which the first base, the second base, and the third base are arranged. The first base is joined to the main surface via an electrode. The second base is arranged between the module substrate and the first base in a sectional view and is joined to the main surface via an electrode. At least part of the first base is overlapped with at least part of the second base and at least part of the third base in a plan view.