Gate-Segmented RF Output Stage for High-Power Low-Parasitic Transmission
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Solution Overview
Problem
Existing RF transmitters struggle to achieve high-speed and high-power performance efficiently, particularly in applications like 5G mMIMO base stations, due to limitations in output power and efficiency in current digital transmitter solutions.
Innovation Solution
The implementation of a gate-segmented power output stage in an RF transmitter, where a field-effect transistor is segmented into smaller power output stage segments corresponding to parts of the gate periphery, and a digital driver individually switches these segments between on-mode and cut-off mode based on input signals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a single large power amplifier stage is used to achieve high output power, then the required power level is met, but parasitic effects increase and RF performance deteriorates
Solution Approach 1:
The patent divides the single large power amplifier stage into multiple smaller power output stage segments, each corresponding to a respective part of the gate periphery. This segmentation reduces parasitic effects in each individual segment while collectively achieving the required high output power through parallel operation of all segments.
2Loss of energy
If digital switching is applied to power amplifier segments, then system efficiency improves, but switching speed limitations prevent high-speed operation
Solution Approach 1:
The patent segments the power output stage into multiple independently controllable sections, each with its own digital driver. This allows parallel switching operation where multiple segments can be switched simultaneously, achieving both high efficiency through digital switching and high speed through parallel operation.
Solution Approach 2:
The patent transitions from single-dimensional sequential switching to multi-dimensional parallel switching by controlling multiple segments independently along the gate periphery dimension. This dimensional expansion enables simultaneous switching of multiple segments, dramatically increasing the effective switching speed while maintaining efficiency benefits.
3Object-affected harmful factors
If gate segmentation is implemented to reduce parasitics, then RF performance improves, but device complexity increases
Solution Approach 1:
The patent segments the gate periphery into multiple sections, with each segment controlled by an individual digital driver output. This segmentation reduces parasitic effects and improves RF performance by creating smaller, better-behaved amplifier sections while maintaining overall functionality.
Solution Approach 2:
The patent employs a digital driver architecture where multiple output terminals control different segments using the same fundamental switching mechanism. This universal control approach manages device complexity by reusing proven digital driver designs across multiple segments rather than requiring unique control circuitry for each segment.
Data Source
AI summary
An RF transmitter (1) having a gate-segmented power output stage (2) and a digital driver (5). The gate-segmented power output stage (2) includes a field-effect transistor with a plurality of gate fingers (32) and drain fingers (31) that define a gate periphery. The field-effect transistor comprises a plurality of power output stage segments (3) that each correspond to a respective part of the gate periphery, and that each have a respective power output stage segment input (4). The digital driver (5) has control outputs (6) which are connected to corresponding ones of the respective power output stage segment inputs (4), and is configured for individually switching each of the power output stage segments (3) between an on mode and a cut-off mode in dependence of one or more input signals to obtain a modulated RF carrier signal at an output (7) of the gate-segmented power output stage (2).