High-Frequency Package Layout for Wideband IM3 Reduction

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Solution Overview

Problem

High frequency amplifiers face challenges in reducing third-order intermodulation distortion (IM3) as the number of subcarriers increases, particularly when the frequency difference between subcarriers exceeds 50-60 MHz, and existing solutions struggle to effectively place filter circuits next to the amplification element due to miniaturization and component density constraints.

Innovation Solution

A high frequency amplifier device with a filter circuit integrated on the substrate next to the amplification element, utilizing a coupling circuit to combine output signals and a filter circuit configured to reduce IM3, which includes an LC parallel-resonant circuit and a CR filter circuit connected in series, positioned efficiently near the amplification element to enhance distortion reduction.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the filter circuit is placed next to the amplification element to reduce IM3, then the distortion reduction effect is enhanced, but the device complexity and manufacturing difficulty increase due to miniaturization constraints

Engineering Contradiction:
ImproveIM3 reduction effectVSAvoidcomponent arrangement complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The filter circuit is integrated into the same substrate as the amplification element, merging two previously separate components into a unified structure. This integration maintains the IM3 reduction effectiveness while reducing overall device complexity and eliminating the need for separate mounting of the filter circuit.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The filter circuit is arranged in a different spatial dimension relative to the amplification element, specifically positioned at a corner portion of the substrate while the amplification element is at the center. This dimensional reorganization allows close proximity for effective IM3 reduction without increasing linear footprint or manufacturing complexity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Productivity

If the number of subcarriers is increased to increase transmission rate, then the bandwidth is widened, but the third-order intermodulation distortion (IM3) rapidly increases

Engineering Contradiction:
Improvetransmission rateVSAvoidthird-order intermodulation distortion
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The filter circuit is positioned in advance next to the amplification element to preemptively counteract the generation of third-order intermodulation distortion. By placing the filter circuit in close proximity before the distorted signals propagate further, the harmful IM3 components are suppressed early in the signal path, enabling higher subcarrier counts without excessive distortion.

Inventive Principle:
Principle #9Preliminary anti-action

3Ease of manufacture

If the filter circuit is placed farther from the amplification element, then the manufacturing and assembly is easier, but the effect of reducing IM3 becomes less effective

Engineering Contradiction:
Improvefilter circuit placementVSAvoidIM3 reduction effectiveness
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The filter circuit and amplification element are merged into the same substrate structure, eliminating the trade-off between placement ease and effectiveness. The integration ensures close proximity for maximum IM3 reduction while maintaining standard manufacturing processes for substrate-based component placement.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution significantly reduces third-order IM3 over a wide band by placing the filter circuit close to the amplification element, improving RF characteristics and reducing the number of mounting steps, while maintaining miniaturization and cost efficiency.

Implementation Method 1

a filter circuit configured to reduce third-order IMD (Inter Modulation Distortion) included in the one output signal

Methodology Applied
Scientific EffectResonance: Resonance

Implementation Method 2

The filter circuit is arranged next to an edge of the substrate in the second direction, and arranged next to an edge of the substrate on the output terminal side in the first direction

Methodology Applied
Scientific EffectFiltering: Filter (electronic)

Data Source

PatentUS11831282B2High frequency package
Publication Date: 2023.11.28 SUMITOMO ELECTRIC DEVICE INNOVATIONS
  • US11831282B2 patent drawing
  • US11831282B2 patent drawing
  • US11831282B2 patent drawing

AI summary

A high frequency package includes a package having an input terminal and an output terminal. A substrate housed in the package, has a first side, a second side facing the input terminal, and a third side facing the output terminal. The first side extends in a first direction and connects the second side and the third side, and the second side and the third side extend in a second direction intersecting the first direction. A coupling circuit on the substrate is electrically connected to the input terminal and the output terminal to input an input signal from the input terminal disposed at the second side of the substrate and output an output signal to the output terminal disposed at the third side of the substrate. A filter circuit on the substrate is electrically connected to the coupling circuit, an is configured to reduce third-order IMD (Inter Modulation Distortion) included in the output signal. The output signal is output from the coupling circuit in a middle of the output terminal side of the third side of the substrate. The filter circuit is arranged on an edge of the first side of the substrate, and an edge of the third side of the substrate.