RF Power Transistor Package Substrate for Shorter Bond Wires
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Solution Overview
Problem
Conventional base substrates for RF power transistors have limitations in impedance matching due to their flat metal base design, restricting RF bandwidth and requiring improved thermal conductivity and expansion coefficients.
Innovation Solution
A semiconductor package component with a base substrate featuring a protrusion on which a die chip is mounted, connected to a lead frame via a wire, allowing for reduced wire length and enhanced impedance matching, thermal conductivity, and reliability, using a ceramic layer and multi-layer metal structure with specific thermal properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a flat metal base is used for the base substrate, then the manufacturing process is simple, but impedance matching during wire bonding is limited and RF bandwidth is restricted
Solution Approach 1:
The patent introduces a protrusion structure that rises from the flat base substrate surface, transitioning from a two-dimensional flat surface to a three-dimensional structured surface. This dimensional change allows the wire bonding process to occur at an elevated position, effectively reducing the wire length and improving impedance matching without complicating the base manufacturing process
2Reliability
If a protrusion is added to the base substrate to reduce wire length, then impedance matching is improved, but the device complexity increases
Solution Approach 1:
Instead of making the entire base substrate complex, the patent applies the protrusion structure only in the local area where wire bonding occurs. The majority of the base substrate remains flat and simple, while only a specific localized region features the elevated protrusion structure, thereby minimizing the increase in overall device complexity
3Reliability
If the wire length is reduced by using a protrusion, then impedance matching is improved, but the manufacturing process becomes more complex
Solution Approach 1:
The protrusion structure is pre-formed on the base substrate before the wire bonding process. This preliminary action of creating the elevated surface feature in advance allows the subsequent wire bonding to be performed more easily with reduced wire length, as the positioning and geometry are already established rather than requiring complex real-time adjustments
Data Source
AI summary
A semiconductor package component and a semiconductor package including the same. More particularly, the present disclosure relates to a semiconductor package component for an RF power transistor and a semiconductor package including the same. Further particularly, it relates to a semiconductor package component for an RF power transistor and a semiconductor package including the same, capable of adjusting impedance matching of an RF transistor by connecting a die chip and a lead frame with a wire so that a length of the wire is reduced as much as the protruding height of the base substrate.